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IPP60R380P6

Infineon

MOSFET

IPB60R380P6,IPP60R380P6,IPD60R380P6, IPA60R380P6 MOSFET 600VCoolMOSªP6PowerTransistor CoolMOS™isarevolutionar...


Infineon

IPP60R380P6

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Description
IPB60R380P6,IPP60R380P6,IPD60R380P6, IPA60R380P6 MOSFET 600VCoolMOSªP6PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. D²PAK tab PG-TO220 tab 2 1 3 PG-TO220FP DPAK tab 2 1 3 Features IncreasedMOSFETdv/dtruggedness ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pb-freeplating,Halogenfreemoldcompound QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Potentialapplications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS. Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max RDS(on),max 650 380 V mΩ Qg.typ 19 nC ID,pulse 29 A Eoss@400V 2.7 µJ Body diode di/dt 500 A/µs Type/Ordering...




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