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IPB64N25S3-20 Dataheets PDF



Part Number IPB64N25S3-20
Manufacturers Infineon
Logo Infineon
Description Power MOSFET
Datasheet IPB64N25S3-20 DatasheetIPB64N25S3-20 Datasheet (PDF)

OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on),max ID IPB64N25S3-20 250 V 20 m 64 A PG‐TO263‐3‐2 Type IPB64N25S3-20 Package PG-TO263-3-2 Marking 3PN2520 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions I D T C=25 °C, V GS=10 V T C=100°C, V GS=.

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OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on),max ID IPB64N25S3-20 250 V 20 m 64 A PG‐TO263‐3‐2 Type IPB64N25S3-20 Package PG-TO263-3-2 Marking 3PN2520 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions I D T C=25 °C, V GS=10 V T C=100°C, V GS=10V1) Pulsed drain current1) Avalanche energy, single pulse1) I D,pulse E AS T C=25°C I D=27A Avalanche current, single pulse I AS - Reverse diode dv /dt dv /dt Gate source voltage Power dissipation Operating and storage temperature V GS - P tot T C=25°C T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 64 46 256 270 27 6 ±20 300 -55 ... +175 55/175/56 Unit A mJ A kV/µs V W °C Rev. 1.1 page 1 2014-09-12 Parameter Symbol Conditions Thermal characteristics1), 3) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA SMD version, device on PCB R thJA - - minimal footprint 6 cm2 cooling area2) IPB64N25S3-20 min. Values typ. Unit max. - - 0.5 K/W - - 62 - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 250 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=270µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=250V, V GS=0V - 0.1 1 µA V DS=250V, V GS=0V, T j=125°C2) - 10 100 Gate-source leakage current I GSS V GS=20V, V DS=0V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=64A - 17.5 20 m Rev. 1.1 page 2 2014-09-12 Parameter Dynamic characteristics1) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics1) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current1) Diode pulse current1) Diode forward voltage Reverse recovery time1) Symbol Conditions IPB64N25S3-20 min. Values typ. Unit max. C iss C oss Crss t d(on) tr t d(off) tf V GS=0V, V DS=25V, f =1MHz V DD=100V, V GS=10V, I D=25A, R G=1.6 - 5240 2900 85 18 20 45 12 7000 pF 3900 170 - ns - Q gs - 24 31 nC Q gd V DD=200V, I D=64A, - 11 22 Q g V GS=0 to 10V - 67 89 V plateau - 4.8 - V IS I S,pulse V SD T C=25°C V GS=0V, I F=64A, T j=25°C t rr V R=125V, I F=50A, di F/dt =100A/µs - - 64 A - - 256 - 1 1.2 V - 174 - ns Reverse recovery charge1) Q rr - 1095 - nC 1) Defined by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Devices thermal performance determined according to EIA JESD 51-14 "Transient Dual Interface Test Method For The Measurement Of The Thermal Resistance" Rev. 1.1 page 3 2014-09-12 1 Power dissipation P tot = f(T C); V GS ≥ 6 V 2 Drain current I D = f(T C); V GS ≥ 6 V; SMD IPB64N25S3-20 350 80 300 60 250 Ptot [W] ID [A] 200 150 100 50 0 0 50 100 150 TC [°C] 3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0; SMD parameter: t p 1000 40 20 0 200 0 50 100 150 TC [°C] 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 100 ID [A] ZthJC [K/W] 100 10 1 µs 10 µs 100 µs 1 ms 0.5 10-1 0.1 0.05 0.01 10-2 single pulse 200 1 0.1 Rev. 1.1 10-3 1 10 100 1000 10-6 10-5 10-4 10-3 10-2 10-1 100 VDS [V] tp [s] page 4 2014-09-12 5 Typ. output characteristics I D = f(V DS); T j = 25 °C; SMD parameter: V GS 250 200 10 V 6V 5.5 V IPB64N25S3-20 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS 25 4.5 V 23 ID [A] RDS(on) [m] 150 21 100 5V 19 5.5 V 6V 50 17 10 V ID [A] RDS(on) [m] 0 0246 VDS [V] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 256 8 224 192 160 128 96 64 32 0 3 175 °C 25 °C -55 °C 45 VGS [V] 6 Rev. 1.1 15 10 0 10 20 30 40 50 ID [A] 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 64 A; V GS = 10 V; SMD 60 55 45 35 25 15 75 -60 -20 20 60 100 140 180 Tj [°C] page 5 2014-09-12 VGS(th) [V] C [pF] 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 4 3.5 3 270 µA 2.5 27 µA 2 IPB64N25S3-20 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 104 Ciss 103 Coss 102 Crss 1.5 -60 -20 20 60 100 140 180 Tj [°C] 101 0 50 100 150 200 250 VDS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Avalanche characteristics I A S= f(t AV) parameter: Tj(start) 100 IF [A] IAV [A] 102 102 175 °C 25 °C 101 101 175 °C 25 °C 100 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] 1 1 Rev. 1.1 page 6 25 °C 150 °C 10 tAV [µs] 100 °C 100 2014-09-12 13 Avalanche energy E AS = f.


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