Document
OptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested
Product Summary VDS RDS(on),max ID
IPB64N25S3-20
250 V 20 m 64 A PG‐TO263‐3‐2
Type IPB64N25S3-20
Package PG-TO263-3-2
Marking 3PN2520
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous drain current
Symbol
Conditions
I D T C=25 °C, V GS=10 V
T C=100°C, V GS=10V1)
Pulsed drain current1) Avalanche energy, single pulse1)
I D,pulse E AS
T C=25°C I D=27A
Avalanche current, single pulse
I AS -
Reverse diode dv /dt
dv /dt
Gate source voltage Power dissipation Operating and storage temperature
V GS
-
P tot T C=25°C
T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
64
46
256 270 27
6 ±20 300 -55 ... +175 55/175/56
Unit A
mJ A kV/µs V W °C
Rev. 1.1
page 1
2014-09-12
Parameter
Symbol
Conditions
Thermal characteristics1), 3)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
SMD version, device on PCB
R thJA
-
-
minimal footprint 6 cm2 cooling area2)
IPB64N25S3-20
min.
Values typ.
Unit max.
- - 0.5 K/W - - 62 - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= 1mA
250 -
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=270µA
2.0
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=250V, V GS=0V
-
0.1
1 µA
V DS=250V, V GS=0V, T j=125°C2)
-
10 100
Gate-source leakage current
I GSS
V GS=20V, V DS=0V
-
1 100 nA
Drain-source on-state resistance
R DS(on) V GS=10V, I D=64A
- 17.5 20 m
Rev. 1.1
page 2
2014-09-12
Parameter
Dynamic characteristics1) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics1) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage
Reverse Diode Diode continous forward current1) Diode pulse current1)
Diode forward voltage
Reverse recovery time1)
Symbol
Conditions
IPB64N25S3-20
min.
Values typ.
Unit max.
C iss C oss Crss t d(on) tr t d(off) tf
V GS=0V, V DS=25V, f =1MHz
V DD=100V, V GS=10V, I D=25A, R G=1.6
-
5240 2900
85 18 20 45 12
7000 pF 3900 170
- ns -
Q gs - 24 31 nC
Q gd V DD=200V, I D=64A, - 11 22
Q g V GS=0 to 10V
- 67 89
V plateau
- 4.8 - V
IS I S,pulse
V SD
T C=25°C
V GS=0V, I F=64A, T j=25°C
t rr
V R=125V, I F=50A, di F/dt =100A/µs
- - 64 A - - 256 - 1 1.2 V
- 174 - ns
Reverse recovery charge1)
Q rr
- 1095 - nC
1) Defined by design. Not subject to production test.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
3) Devices thermal performance determined according to EIA JESD 51-14 "Transient Dual Interface Test Method For The Measurement Of The Thermal Resistance"
Rev. 1.1
page 3
2014-09-12
1 Power dissipation P tot = f(T C); V GS ≥ 6 V
2 Drain current I D = f(T C); V GS ≥ 6 V; SMD
IPB64N25S3-20
350 80
300
60 250
Ptot [W] ID [A]
200
150
100
50
0 0 50 100 150 TC [°C]
3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0; SMD parameter: t p
1000
40
20
0 200 0 50 100 150
TC [°C] 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T
100
ID [A] ZthJC [K/W]
100 10
1 µs 10 µs 100 µs
1 ms
0.5
10-1
0.1 0.05
0.01
10-2
single pulse
200
1 0.1
Rev. 1.1
10-3
1 10 100 1000
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
page 4
2014-09-12
5 Typ. output characteristics I D = f(V DS); T j = 25 °C; SMD parameter: V GS
250 200
10 V
6V 5.5 V
IPB64N25S3-20
6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS
25
4.5 V
23
ID [A] RDS(on) [m]
150 21
100
5V
19
5.5 V 6V
50 17
10 V
ID [A] RDS(on) [m]
0 0246 VDS [V]
7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j
256
8
224
192
160
128
96
64
32
0 3
175 °C 25 °C -55 °C
45 VGS [V]
6
Rev. 1.1
15 10 0 10 20 30 40 50
ID [A]
8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 64 A; V GS = 10 V; SMD
60
55
45
35
25
15
75 -60 -20 20 60 100 140 180
Tj [°C]
page 5
2014-09-12
VGS(th) [V] C [pF]
9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D
4
3.5
3
270 µA
2.5
27 µA
2
IPB64N25S3-20
10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz
104
Ciss
103
Coss
102
Crss
1.5 -60 -20 20
60 100 140 180
Tj [°C]
101 0
50 100 150 200 250 VDS [V]
11 Typical forward diode characteristicis IF = f(VSD) parameter: T j
103
12 Avalanche characteristics I A S= f(t AV) parameter: Tj(start)
100
IF [A] IAV [A]
102 102
175 °C 25 °C
101
101 175 °C 25 °C 100
10
100 0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD [V]
1 1
Rev. 1.1
page 6
25 °C 150 °C
10 tAV [µs]
100 °C
100
2014-09-12
13 Avalanche energy E AS = f.