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2N3019S-M

DSI

TRANSISTOR

Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltag...


DSI

2N3019S-M

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Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltage, Emitter to Base (VEBO) Collector Current (IC) Base Current (IB) Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ) empty 140.0 V 80.0 V 7.0 V 1.0 A empty A 5.0 W 35.0 °C/W 200.0 °C empty empty NO. TYPE empty empty CASE empty empty 2N3019S-M NPN empty empty TO-39 MIL-S-19500 BURN-IN 48h/125°C PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted C NO. SYMBOL CONDITIONS MIN. MAX. UNITS 1. BVCBO IC = 100.0 µA 140.0 - V 2. BVCEO IC = 30.0 mA (1) 80.0 - V 3. BVEBO IE = 100.0 µA 7.0 - V 4. hFE IC = 0.1 mA, VCE = 10.0 V (1) 50.0 - - 5. hFE IC = 10.0 mA, VCE = 10.0 V (1) 90.0 - - 6. hFE IC = 150.0 mA, VCE = 10.0 V (1) 100.0 300.0 - 7. hFE IC = 500.0 mA, VCE = 10.0 V (1) 50.0 - - 8. hFE IC = 1000.0 mA, VCE = 10.0 V (1) 15.0 - - 9. VCE(SAT) IC = 150.0 mA, IB = 15.0 mA - 0.2 V 10. VCE(SAT) IC = 500.0 mA, IB = 50.0 mA (1) - 0.5 V 11. VBE(SAT) IC = 150.0 mA, IB = 15.0 mA (1) - 1.1 V 12. fT IC = 50.0 mA, VCE = 10.0 V, f = 20.0 MHz 100.0 - MHz 13. Cobo VCB = 10.0 V - 12.0 pF 14. 15. 16. 17. 18. 19. 20. Notes (1)pulse-tested tp ≤ 300 µs, duty cycle ≤ 2 % empty empty empty DIMENSIONS in mm Marking 2N3019S-M + GREEN DOT Customer GENERAL PURPOSE ...




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