FQA10N80C_F109

FQA10N80C_F109 — N-Channel QFET® MOSFET FQA10N80C_F109 N-Channel QFET® MOSFET 800 V, 10 A, 1.1 Ω Features 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A Low Gate Charge (Typ. 44 nC) Low Crss (Typ. 15 pF) 100% Avalanche Tested RoHS compliant March 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G D S TO-3PN G MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Drain Current Drain Current -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max Thermal Resistance, Junction to Ambient, Max S FQA10N80C_F109 800 10 ...