10N80

SEMICONDUCTOR 10N80 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 10A, 800Volts DESCRIPTION The Nell 10N80 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V, and max. threshold voltage of 5 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. FEATURES RDS(ON) = 1.1Ω @ VGS = 10V Ultra low gate charge(58nC max.) Low reverse transfer capacitance (CRSS = 15pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G D S TO-3PB (10N80B) GDS TO-220F (10N80AF) D (Drain) G (Gate) S (Source) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 10 800 1.1 @ VGS = 10V 58 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS Drain to Source voltage TJ=25°C to 150°C VDGR Drain to Gate voltage RGS=20KΩ VGS Gate to Source voltage ID Continuous Drain Current TC=25°C TC=100°C IDM Pulsed Drain current(Note 1) IAR Avalanche current(Note 1) EAR Repetitive avalanche energy(Note 1) lAR=10A, RGS=50Ω, VGS=10V EAS Single pulse avalanche energy(Note 2) lAS=10A, L=17.3mH dv/dt Peak diode recovery dv/dt(Note 3) Total power dissipation PD Linear derating factor above TC=25°C TC=25°C TC=25°C TO-3PB ...