1N4624

1N4614 THRU 1N4627 SILICON ZENER DIODE LOW NOISE 1.8 VOLT THRU 6.2 VOLT 250mW, 5% TOLERANCE DO-35 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N4614 series silicon Zener diode is designed for low leakage, low current, and low noise applications. Higher voltage devices are available in the 1N4099 series. MARKING: Devices shall either be marked with the prefix ‘C’ followed by the full part number or by the marking code in the Electrical Characteristics Table. MAXIMUM RATINGS: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature SYMBOL PD TJ, Tstg 250 -65 to +200 UNITS mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.0V MAX @ IF=200mA (for all types) TYPE ZENER VOLTAGE VZ @ IZT MIN NOM MAX TEST CURRENT IZT MAXIMUM ZENER IMPEDANCE ZZT @ IZT MAXIMUM REVERSE CURRENT IR @ VR MAXIMUM ZENER CURRENT MAXIMUM NOISE DENSITY IZM ND @ 250μA VVV μA Ω μA V mA μV/ Hz 1N4614 1.710 1.8 1.890 250 1200 7.5 1.0 120 1.0 1N4615 1.900 2.0 2.100 250 1250 5.0 1.0 110 1.0 1N4616 2.090 2.2 2.310 250 1300 4.0 1.0 100 1.0 1N4617 2.280 2.4 2.520 250 1400 2.0 1.0 95 1.0 1N4618 2.565 2.7 2.835 250 1500 1.0 1.0 90 1.0 1N4619 2.850 3.0 3.150 250 1600 0.8 1.0 85 1.0 1N4620 3.135 3.3 3.465 250 1650 7.5 1.5 80 1.0 1N4621 3.420 3.6 3.780 250 1700 7.5 2.0 75 1.0 1N4622 3.705 3.9 4.095 250 1650 5.0 2.0 70 1.0 1N4623 4.085 4.3 4.515 250 1600 4.0 2.0 65 1.0 1N4624 4.465 4.7 4.935 250 1...