SILICON ZENER DIODE
1N4614 THRU 1N4627 SILICON ZENER DIODE
LOW NOISE 1.8 VOLT THRU 6.2 VOLT 250mW, 5% TOLERANCE
DO-35 CASE
w w w. c e n t r...
Description
1N4614 THRU 1N4627 SILICON ZENER DIODE
LOW NOISE 1.8 VOLT THRU 6.2 VOLT 250mW, 5% TOLERANCE
DO-35 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N4614 series silicon Zener diode is designed for low leakage, low current, and low noise applications. Higher voltage devices are available in the 1N4099 series.
MARKING: Devices shall either be marked with the prefix ‘C’ followed by the full part number or by the marking code in the Electrical Characteristics Table.
MAXIMUM RATINGS: (TA=25°C) Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
PD TJ, Tstg
250 -65 to +200
UNITS mW °C
ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.0V MAX @ IF=200mA (for all types)
TYPE
ZENER VOLTAGE VZ @ IZT MIN NOM MAX
TEST CURRENT
IZT
MAXIMUM ZENER
IMPEDANCE
ZZT @ IZT
MAXIMUM REVERSE CURRENT
IR @ VR
MAXIMUM ZENER
CURRENT
MAXIMUM NOISE
DENSITY
IZM ND @ 250μA
VVV
μA
Ω
μA V
mA
μV/ Hz
1N4614 1.710 1.8 1.890
250
1200
7.5 1.0
120
1.0
1N4615 1.900 2.0 2.100
250
1250
5.0 1.0
110
1.0
1N4616 2.090 2.2 2.310
250
1300
4.0 1.0
100
1.0
1N4617 2.280 2.4 2.520
250
1400
2.0 1.0
95
1.0
1N4618 2.565 2.7 2.835
250
1500
1.0 1.0
90
1.0
1N4619 2.850 3.0 3.150
250
1600
0.8 1.0
85
1.0
1N4620 3.135 3.3 3.465
250
1650
7.5 1.5
80
1.0
1N4621 3.420 3.6 3.780
250
1700
7.5 2.0
75
1.0
1N4622 3.705 3.9 4.095
250
1650
5.0 2.0
70
1.0
1N4623 4.085 4.3 4.515
250
1600
4.0 2.0
65
1.0
1N4624 4.465 4.7 4.935
250
1...
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