Si6040

Si6040 N-Channel Enhancement MOSFET Si6040 Features ·Low On resistance. ·4.5V drive. ·RoHS compliant. 2,4 Package Dimensions TO-252 1 3 Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature Tstg Conditions PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) Ratings 60 +20 12 25 40 40 150 -55~+150 Unit V V A A W W 0C 0C Electrical Characteristics at Ta=250C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate Threshold Voltage Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(th) RDS(ON) RDS(ON) Ciss Coss Crss Conditions ID=250uA, VGS=0V VDS=60V, VGS=0V VGS=+20V, VDS=0V VDS= VGS, ID=250uA ID=12A, VGS=10V ID=7A, VGS=4.5V VDS=30V, VGS=0V, f=1MHz VDS=30V, VGS=0V, f=1MHz VDS=30V, VGS=0V, f=1MHz Ratings min typ max 60 66 - - -1 - - +100 1 1.70 2.5 - 30 40 - 33 50 - 510 - - 60 - - 23 - Unit V uA nA V mΩ mΩ pF pF pF 1 Si6040 Electrical Characteristics at Ta=250C (Continued) Parameter Symbol Conditions Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain...