1N5550

Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = 8.3 ms Max. Power Dissipation (PT) at TC = °C Max. Thermal Resistance (Rth J-A) Max. Junction Temperature (TJ) 200.0 V 200.0 V empty A 3.0 A empty A 100.0 A empty W 70.0 °C/W 175.0 °C NO. TYPE empty empty CASE empty empty 1N5550 SILICON RECTIFIER empty SOD-64_1.3MM empty empty PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted C NO. SYMBOL CONDITIONS MIN. MAX. UNITS 1. VF IF = 3.0 A (1) - 1.0 V 2. IR VR = 200.0 V - 1.0 µA 3. IR VR = 200.0 V, TA = 100.0° C - 75.0 µA 4. trr IF = 0.5 A, IR = 1.0 A, ir = 0.25 A - 2.0 µs 5. CT VR = 12.0 V, f = 1.0 MHz - 100.0 pF 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. Notes (1)pulse-tested tp ≤ 300 µs, duty cycle ≤ 2 % empty empty empty DIMENSIONS in mm Marking 1N5550 Customer GENERAL PURPOSE ...