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PMZ320UPE

P-channel Trench MOSFET

Description

SOT883 PMZ320UPE 30 V, P-channel Trench MOSFET 24 March 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltag...

NXP

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