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PMZ350UPE Dataheets PDF



Part Number PMZ350UPE
Manufacturers NXP
Logo NXP
Description P-channel Trench MOSFET
Datasheet PMZ350UPE DatasheetPMZ350UPE Datasheet (PDF)

SOT883 PMZ350UPE 20 V, P-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 1.8 kV HBM • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 m.

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SOT883 PMZ350UPE 20 V, P-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 1.8 kV HBM • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm 3. Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -8 - 8V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -1.4 A Static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -0.3 A; Tj = 25 °C resistance - 330 450 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. Scan or click this QR code to view the latest information for this product NXP Semiconductors PMZ350UPE 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline 1 3 2 Transparent top view DFN1006-3 (SOT883) Graphic symbol G D S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name PMZ350UPE DFN1006-3 Description Version DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number PMZ350UPE Marking code ZP PMZ350UPE Product data sheet All information provided in this document is subject to legal disclaimers. 14 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 14 NXP Semiconductors PMZ350UPE 20 V, P-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tj junction temperature Tamb ambient temperature Tstg storage temperature Source-drain diode IS source current ESD maximum rating VESD electrostatic discharge voltage Tsp = 25 °C Tamb = 25 °C HBM [1] [1] [1] [2] [1] [1] [3] Min Max Unit - -20 V -8 8 V - -1.4 A - -1 A - -0.7 A - -2.8 A - 360 mW - 715 mW - 3125 mW -55 150 °C -55 150 °C -65 150 °C - -0.8 A - 1800 V [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. PMZ350UPE Product data sheet All information provided in this document is subject to legal disclaimers. 14 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 14 NXP Semiconductors 120 Pder (%) 80 017aaa123 PMZ350UPE 20 V, P-channel Trench MOSFET 120 Ider (%) 80 017aaa124 40 40 0 - 75 - 25 25 75 125 175 Tj (°C) Fig. 1. Normalized total power dissipation as a function of junction temperature 0 - 75 - 25 25 75 125 175 Tj (°C) Fig. 2. Normalized continuous drain current as a function of junction temperature -10 ID (A) Limit RDSon = VDS/ID 017aaa715 -1 tp = 1 ms -10-1 DC; Tsp = 25 °C tp = 10 ms tp = 100 ms DC; Tamb = 25 °C; drain mounting pad 1 cm2 -10-2 0 IDM = single pulse -1 -10 -102 VDS (V) Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air Min Typ Max Unit [1] - 304 350 K/W [2] - 150 175 K/W [3] - 90 103 K/W PMZ350UPE Product data sheet All information provided in this document is subject to legal disclaimers. 14 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 14 NXP Semiconductors PMZ350UPE 20 V, P-channel Trench MOSFET Symbol Rth(j-sp) 103 Parameter Conditions thermal resistance from junction to solder point Min Typ Max Unit - 35 40 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2, t ≤ 5 s. 017aaa109 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0 0.01 10 10- 3 10- 2 FR4 PCB, standard footprint 10- 1 1 10 102 103 tp (s) Fig. 4. Transient thermal impeda.


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