Document
SOT883
PMZ350UPE
20 V, P-channel Trench MOSFET
14 May 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 1.8 kV HBM • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
3. Applications
• Relay driver • High-speed line driver • High-side loadswitch • Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-8 -
8V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -1.4 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -0.3 A; Tj = 25 °C resistance
- 330 450 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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NXP Semiconductors
PMZ350UPE
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain
Simplified outline
1 3
2
Transparent top view
DFN1006-3 (SOT883)
Graphic symbol
G
D
S 017aaa259
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMZ350UPE
DFN1006-3
Description
Version
DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883
7. Marking
Table 4. Marking codes Type number PMZ350UPE
Marking code ZP
PMZ350UPE
Product data sheet
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14 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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NXP Semiconductors
PMZ350UPE
20 V, P-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
ESD maximum rating
VESD
electrostatic discharge voltage
Tsp = 25 °C
Tamb = 25 °C HBM
[1] [1] [1] [2] [1]
[1] [3]
Min Max Unit - -20 V
-8 8
V
- -1.4 A
- -1 A
- -0.7 A
- -2.8 A
- 360 mW
- 715 mW - 3125 mW
-55 150 °C
-55 150 °C
-65 150 °C
- -0.8 A
- 1800 V
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
PMZ350UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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NXP Semiconductors
120
Pder (%)
80
017aaa123
PMZ350UPE
20 V, P-channel Trench MOSFET
120
Ider (%)
80
017aaa124
40 40
0 - 75
- 25
25
75 125 175 Tj (°C)
Fig. 1. Normalized total power dissipation as a function of junction temperature
0 - 75 - 25
25
75 125 175 Tj (°C)
Fig. 2. Normalized continuous drain current as a function of junction temperature
-10 ID (A)
Limit RDSon = VDS/ID
017aaa715
-1
tp = 1 ms
-10-1
DC; Tsp = 25 °C
tp = 10 ms tp = 100 ms
DC; Tamb = 25 °C; drain mounting pad 1 cm2
-10-2 0
IDM = single pulse
-1
-10 -102 VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6. Symbol Rth(j-a)
Thermal characteristics Parameter
thermal resistance from junction to ambient
Conditions in free air
Min Typ Max Unit
[1] -
304 350 K/W
[2] -
150 175 K/W
[3] -
90 103 K/W
PMZ350UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved
4 / 14
NXP Semiconductors
PMZ350UPE
20 V, P-channel Trench MOSFET
Symbol Rth(j-sp)
103
Parameter
Conditions
thermal resistance from junction to solder point
Min Typ Max Unit - 35 40 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2, t ≤ 5 s.
017aaa109
Zth(j-a) (K/W)
102
duty cycle = 1
0.75 0.5
0.33 0.25 0.2
0.1 0.05
0.02 0 0.01
10 10- 3
10- 2
FR4 PCB, standard footprint
10- 1
1
10 102 103 tp (s)
Fig. 4. Transient thermal impeda.