Document
STPS30M60DJF
Datasheet
60 V, 30 A high efficiency PowerFLAT power Schottky diode
Product status link STPS30M60DJF
Product summary
Symbol
Value
IF(AV)
30 A
VRRM
60 V
Tj (max.)
150 °C
VF (typ.)
0.46 V
Features
• Low forward voltage drop • Very low conduction losses • Low thermal resistance • Avalanche rated • High integration • Thin package: 1 mm • ECOPACK2 compliant
Applications
• Switching diode • SMPS • DC/DC converter • Telecom power
Description
This Schottky rectifier is ideally suited for switch mode power supply and high frequency DC to DC converters. Packaged in PowerFLAT 5x6, the STPS30M60DJF is optimized for use in low voltage high frequency inverters, free-wheeling and polarity protection applications. Its low profile was especially designed to be used in applications with space-saving constraints.
DS9019 - Rev 2 - March 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
STPS30M60DJF
Characteristics
1
Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, anode terminals shortcircuited)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
60
V
IF(RMS)
Forward rms current
45
A
IF(AV)
Average forward current, δ = 0.5 square wave
Tc = 100 °C
30
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
250
A
PARM
Repetitive peak avalanche power
tp = 10 µs, Tj = 125 °C
1370
W
Tstg
Storage temperature range
-65 to +175
°C
Tj
Maximum operating junction temperature(1)
+150
°C
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Symbol Rth(j-c)
Junction to case
Table 2. Thermal resistance parameters Parameter
Max. Unit 2 °C/W
For more information, please refer to the following application note:
•
AN5046: Printed circuit board assembly recommendations for STMicroelectronics PowerFLAT packages
Table 3. Static electrical characteristics (anode terminals short-circuited)
Symbol
Parameter
IR(1)
Reverse leakage current
VF(2)
Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 μs, δ < 2%.
Test conditions
Tj = 25 °C Tj = 125 °C
VR = VRRM
Tj = 25 °C Tj = 125 °C
IF = 15 A
Tj = 25 °C Tj = 125 °C
IF = 30 A
Min. Typ. Max. Unit
-
90 µA
-
20 50 mA
-
0.59
- 0.46 0.52
V
-
0.72
- 0.57 0.67
To evaluate the conduction losses, use the following equation:
P = 0.55 x IF(AV) + 0.004 x IF2(RMS)
For more information, please refer to the following application notes related to the power losses:
•
AN604: Calculation of conduction losses in a power rectifier
•
AN4021: Calculation of reverse losses in a power diode
DS9019 - Rev 2
page 2/9
1.1
Characteristics (curves)
STPS30M60DJF
Characteristics (curves)
Figure 1. Average forward power dissipation versus average forward current
PF(AV)(W) 30
δ = 0.5
δ=1
25
20
δ = 0.2
δ = 0.1
15
δ = 0.05
10
5
0 0
T
IF(AV)(A )
δ=tp/T
tp
5
10
15
20
25
30
3.