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STPS30M60DJF Dataheets PDF



Part Number STPS30M60DJF
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description High efficiency power Schottky diode
Datasheet STPS30M60DJF DatasheetSTPS30M60DJF Datasheet (PDF)

STPS30M60DJF Datasheet 60 V, 30 A high efficiency PowerFLAT power Schottky diode Product status link STPS30M60DJF Product summary Symbol Value IF(AV) 30 A VRRM 60 V Tj (max.) 150 °C VF (typ.) 0.46 V Features • Low forward voltage drop • Very low conduction losses • Low thermal resistance • Avalanche rated • High integration • Thin package: 1 mm • ECOPACK2 compliant Applications • Switching diode • SMPS • DC/DC converter • Telecom power Description This Schottky rectifier is ideally .

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STPS30M60DJF Datasheet 60 V, 30 A high efficiency PowerFLAT power Schottky diode Product status link STPS30M60DJF Product summary Symbol Value IF(AV) 30 A VRRM 60 V Tj (max.) 150 °C VF (typ.) 0.46 V Features • Low forward voltage drop • Very low conduction losses • Low thermal resistance • Avalanche rated • High integration • Thin package: 1 mm • ECOPACK2 compliant Applications • Switching diode • SMPS • DC/DC converter • Telecom power Description This Schottky rectifier is ideally suited for switch mode power supply and high frequency DC to DC converters. Packaged in PowerFLAT 5x6, the STPS30M60DJF is optimized for use in low voltage high frequency inverters, free-wheeling and polarity protection applications. Its low profile was especially designed to be used in applications with space-saving constraints. DS9019 - Rev 2 - March 2023 For further information contact your local STMicroelectronics sales office. www.st.com STPS30M60DJF Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, anode terminals shortcircuited) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 60 V IF(RMS) Forward rms current 45 A IF(AV) Average forward current, δ = 0.5 square wave Tc = 100 °C 30 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 250 A PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 1370 W Tstg Storage temperature range -65 to +175 °C Tj Maximum operating junction temperature(1) +150 °C 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Symbol Rth(j-c) Junction to case Table 2. Thermal resistance parameters Parameter Max. Unit 2 °C/W For more information, please refer to the following application note: • AN5046: Printed circuit board assembly recommendations for STMicroelectronics PowerFLAT packages Table 3. Static electrical characteristics (anode terminals short-circuited) Symbol Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 μs, δ < 2%. Test conditions Tj = 25 °C Tj = 125 °C VR = VRRM Tj = 25 °C Tj = 125 °C IF = 15 A Tj = 25 °C Tj = 125 °C IF = 30 A Min. Typ. Max. Unit - 90 µA - 20 50 mA - 0.59 - 0.46 0.52 V - 0.72 - 0.57 0.67 To evaluate the conduction losses, use the following equation: P = 0.55 x IF(AV) + 0.004 x IF2(RMS) For more information, please refer to the following application notes related to the power losses: • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses in a power diode DS9019 - Rev 2 page 2/9 1.1 Characteristics (curves) STPS30M60DJF Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current PF(AV)(W) 30 δ = 0.5 δ=1 25 20 δ = 0.2 δ = 0.1 15 δ = 0.05 10 5 0 0 T IF(AV)(A ) δ=tp/T tp 5 10 15 20 25 30 3.


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