N-channel MOSFET
TO-220AB
PSMN4R8-100PSE
N-channel 100 V 5 mΩ standard level MOSFET with improved
SOA in TO220 package
11 July 2014
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Description
TO-220AB
PSMN4R8-100PSE
N-channel 100 V 5 mΩ standard level MOSFET with improved
SOA in TO220 package
11 July 2014
Product data sheet
1. General description
Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of NXP's "NextPower Live" portfolio, the PSMN4R8-100PSE is robust enough to withstand substantial in-rush and fault condition currents during turn on/off, whilst offering a low RDS(on) characteristic to keep temperatures down and efficiency up in continued use. Ideal for telecommunication systems based on 48 V backplanes / supply rails.
2. Features and benefits
Enhanced safe operating area (SOA) for superior protection during linear mode
operation
Very low RDS(on) for low conduction losses
3. Applications
Electronic fuse Hot-swap / Soft-start Uninterruptible power supplies Motor control
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
IDM
peak drain current
pulsed; Tmb = 25 °C; tp ≤ 10 µs; Fig. 3
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
Dynamic characteristics
QGD QG(tot)
gate-drain charge total gate charge
VGS = 10 V; ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15
Min Typ Max Unit - - 100 V - - 693 A - - 405 W
-
4.3 5
mΩ
- 59 83 nC - 196 278 nC
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