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PSMN6R3-120ES Dataheets PDF



Part Number PSMN6R3-120ES
Manufacturers NXP
Logo NXP
Description N-channel MOSFET
Datasheet PSMN6R3-120ES DatasheetPSMN6R3-120ES Datasheet (PDF)

I2PAK PSMN6R3-120ES N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic power supply equipment. 2. Features and benefits • High efficiency due to low switching and conduction losses • Improved dynamic avalanche performance • Suitable for standard level gate drive.

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I2PAK PSMN6R3-120ES N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic power supply equipment. 2. Features and benefits • High efficiency due to low switching and conduction losses • Improved dynamic avalanche performance • Suitable for standard level gate drive • I2PAK package for slimline adaptors & height constrained applications 3. Applications • AC-to-DC power supply • Synchronous rectification • Motor control • Slimline adaptors & chargers 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; resistance Fig. 12 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 25 A; VDS = 60 V; Fig. 14; Fig. 15 Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 70 A; Vsup ≤ 120 V; unclamped; RGS = 50 Ω; Fig. 3 Min Typ Max Unit - - 120 V - - 70 A - - 405 W 4 5.7 6.7 mΩ - 61.9 - nC - 207.1 - nC - - 532 mJ Scan or click this QR code to view the latest information for this product NXP Semiconductors PSMN6R3-120ES N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source mb D drain Simplified outline mb Graphic symbol D G mbb076 S 123 I2PAK (SOT226) 6. Ordering information Table 3. Ordering information Type number Package Name PSMN6R3-120ES I2PAK Description plastic single-ended package (I2PAK); TO-262 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ VGS gate-source voltage ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 VGS = 10 V; Tmb = 100 °C; Fig. 1 IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Tstg storage temperature Tj junction temperature Tsld(M) peak soldering temperature Source-drain diode IS source current Tmb = 25 °C ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C PSMN6R3-120ES Product data sheet All information provided in this document is subject to legal disclaimers. 8 May 2013 Version SOT226 Min Max Unit - 120 V - 120 V -20 20 V - 70 A - 70 A - 280 A - 405 W -55 175 °C -55 175 °C - 260 °C - 70 A - 280 A © NXP B.V. 2013. All rights reserved 2 / 12 NXP Semiconductors PSMN6R3-120ES N-channel 120 V 6.7 mΩ st.


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