Document
I2PAK
PSMN6R3-120ES
N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK
8 May 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic power supply equipment.
2. Features and benefits
• High efficiency due to low switching and conduction losses • Improved dynamic avalanche performance • Suitable for standard level gate drive • I2PAK package for slimline adaptors & height constrained applications
3. Applications
• AC-to-DC power supply • Synchronous rectification • Motor control • Slimline adaptors & chargers
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
Dynamic characteristics
QGD QG(tot)
gate-drain charge total gate charge
VGS = 10 V; ID = 25 A; VDS = 60 V; Fig. 14; Fig. 15
Avalanche ruggedness
EDS(AL)S
non-repetitive drainsource avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 70 A; Vsup ≤ 120 V; unclamped; RGS = 50 Ω; Fig. 3
Min Typ Max Unit - - 120 V - - 70 A - - 405 W
4 5.7 6.7 mΩ
- 61.9 - nC - 207.1 - nC
- - 532 mJ
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NXP Semiconductors
PSMN6R3-120ES
N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1 G gate
2 D drain
3 S source
mb D
drain
Simplified outline
mb
Graphic symbol
D
G mbb076 S
123
I2PAK (SOT226)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN6R3-120ES
I2PAK
Description plastic single-ended package (I2PAK); TO-262
7. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
VGS gate-source voltage
ID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
VGS = 10 V; Tmb = 100 °C; Fig. 1
IDM peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
IS source current
Tmb = 25 °C
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C
PSMN6R3-120ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 May 2013
Version SOT226
Min Max Unit - 120 V
- 120 V
-20 20
V
- 70 A
- 70 A
- 280 A
- 405 W
-55 175 °C
-55 175 °C
- 260 °C
- 70 A - 280 A
© NXP B.V. 2013. All rights reserved
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NXP Semiconductors
PSMN6R3-120ES
N-channel 120 V 6.7 mΩ st.