MRF373AR1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF373A/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28/32 volt transmitter equipment. Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture Output Power — 75 Watts Power Gain — 18.2 dB Efficiency — 60% 100% Tested for Load Mismatch Stress at All Phase Angles with 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW Integrated ESD Protection Excellent Thermal Stability D Characterized with Series Equivalent Large–Signal Impedance Parameters In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel. MRF373AR1 MRF373ASR1 470 – 860 MHz, 75 W, 32 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 360B–05, STYLE 1 NI–360 MRF373AR1 G S CASE 360C–05, STYLE 1 NI–360S MRF373ASR1 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case MRF373AR1 MRF373ASR1 Symbol VDSS VGS PD Tstg TJ MRF373AR1 MRF373ASR1 MRF373AR1 MRF373ASR1 Symbol RθJC Value 70 – 0.5...