Document
Technical Data DIODE
maximum ratings
Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = 1 µs Max. Power Dissipation (PT) at TA = 25° C Max. Thermal Resistance (Rth J-A) Max. Junction Temperature (TJ)
125.0 V
150.0 V
empty
A
0.2 A
0.6 A
4.0 A
0.5 W
300.0 °C/W
175.0 °C
NO. TYPE empty empty CASE empty empty
1N3595-M SILICON empty empty DO-35 MIL-S-19500 BURN-IN 48h/125°C
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
C
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. VRM
IR = 100.0 µA
(1) 150.0
-
V
2. IR
VR = 125.0 V
- 1.0 nA
3. IR
VR = 125.0 V, TA = 150.0° C
- 3.0 µA
4. VF
IF = 1.0 mA
(1) 0.52
0.68
V
5. VF
IF = 5.0 mA
(1) 0.6
0.75
V
6. VF
IF = 10.0 mA
(1) 0.65
0.8
V
7. VF
IF = 50.0 mA
(1) 0.74
0.88
V
8. VF
IF = 100.0 mA
(1) 0.79
0.92
V
9. VF
IF = 200.0 mA
(1) 0.83
1.0
V
10. CT
VR = 0 V, f = 1.0 MHz
- 8.0 pF
11. trr
IF = 10.0 mA, VR = 35.0 V
- 3.0 ns
12.
13.
14.
15.
16.
17.
18.
19.
20.
Notes
(1)pulse-tested tp ≤ 300 µs, duty cycle ≤ 2 % empty empty empty
DIMENSIONS in mm
Marking 3595-M + GREEN DOT Customer GENERAL PURPOSE
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