1N3673A-M

Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IZM) Current, Surge (IFM) at tp = 8.3 ms Max. Power Dissipation (PT) at TC = °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ) 1000.0 V 1000.0 V empty A 12.0 A empty A 240.0 A empty W 2.0 °C/W 150.0 °C NO. TYPE empty empty CASE empty empty 1N3673A-M SILICON empty empty DO-4_UNF MIL-S-19500 BURN-IN 48h/125°C PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted C NO. SYMBOL CONDITIONS MIN. MAX. UNITS 1. IR VR = 1000.0 V - 50.0 µA 2. IR VR = 1000.0 V, TJ = 125.0° C - 1.0 mA 3. VF IF = 12.0 A (1) - 1.1 V 4. trr IF = 1.0 A, VR = 30.0 V - 5.0 µs 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. Notes (1)pulse-tested tp ≤ 300 µs, duty cycle ≤ 2 % empty empty empty DIMENSIONS in mm Marking 1N3673A-M + GREEN DOT Customer GENERAL PURPOSE ...