BLM2010E

ROHS Product BLM2010E N-Channel Enhancement Mode Power MOSFET Description The BLM2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =7A Typ.RDS(ON)= 16mΩ @ VGS=4.5V Typ.RDS(ON)= 20mΩ @ VGS=2.5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram Marking and pin Assignment Application ●PWM application ●Load switch TSSOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package 2010E BLM2010E TSSOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250µA Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V Page1 www.belling.com.cn Limit 20 ±12 7 30 1.5 -55 To 150 Unit V V A A W ℃ 83.3 ℃/W Min Typ Max Unit 20 -- -V 1 ...