BLM3050K

Pb Free Product BLM3050K N-Channel Enhancement Mode Power MOSFET Description The BLM3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =50A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 16mΩ @ VGS=5V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible Power Supply Marking and pin assignment 100% UIS TESTED! TO-252-2L top view Package Marking And Ordering Information Device Marking Device Device Package 3050K BLM3050K TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor ID (100℃) IDM PD Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range EAS TJ,TSTG Limit 30 ±20 50 35 140 60 0.4 70 -55 To 175 Unit V V A A A W W/℃ mJ ℃ Page1 www.belling.com.cn V2.0 Pb Free Product BLM3050K Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC ...