BSZ0503NSI

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTM5Power-MOSFET,30V BSZ0503NSI DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description Features Optimizedforhighperformancebuckconverters MonolithicintegratedSchottky-likediode Verylowon-resistanceRDS(on)@VGS=4.5V 100%avalanchetested N-channel QualifiedaccordingtoJEDEC1)fortargetapplications Pb-freeleadplating;RoHScompliant Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 3.4 mΩ ID 40 A QOSS 10.6 nC QG(0V..4.5V) 7.1 nC OptiMOSTM5Power-MOSFET,30V BSZ0503NSI TSDSON-8FL (enlarged source interconnection) S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSZ0503NSI Package PG-TSDSON-8 FL Marking 0503NSI RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.0,2015-08-06 OptiMOSTM5Power-MOSFET,30V BSZ0503NSI TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics ....