Document
Diode
Silicon Carbide Schottky Diode
IDH02G120C5
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
Final Datasheet
Rev. 2.1 2017-07-21
Industrial Power Control
IDH02G120C5
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
CoolSiCTM SiC Schottky Diode
Features:
Revolutionary semiconductor material - Silicon Carbide No reverse recovery current / No forward recovery Temperature independent switching behavior Low forward voltage even at high operating temperature Tight forward voltage distribution Excellent thermal performance Extended surge current capability Specified dv/dt ruggedness Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant
Benefits
System efficiency improvement over Si diodes Enabling higher frequency / increased power density solutions System size / cost savings due to reduced heatsink requirements and smaller magnetics Reduced EMI Highest efficiency across the entire load range Robust diode operation during surge events High reliability RelatedLinks: www.infineon.com/sic
Applications
Solar inverters Uninterruptable power supplies Motor drives Power Factor Correction
Package pin definitions
Pin 1 and backside – cathode Pin 2 – anode
Key Performance and Package Parameters
Type IDH02G120C5
VDC
IF
1200V
2A
1) J-STD20 and JESD22
Final Data Sheet
QC 14nC
Tj,max Marking 175°C D0212C5
Package PG-TO220-2-1
2
Rev. 2.1, 2017-07-21
IDH02G120C5
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
Table of Contents Description ..................................................................................................................................................2 Table of Contents........................................................................................................................................3 Maximum Ratings .......................................................................................................................................4 Thermal Resistances ..................................................................................................................................4 Electrical Characterics ................................................................................................................................5 Electrical Characteristics Diagram ..............................................................................................................6 Package Drawings ......................................................................................................................................9 Revision History ........................................................................................................................................10 Disclaimer .................................................................................................................................................11
Final Data Sheet
3
Rev. 2.1, 2017-07-21
Maximum ratings
Parameter
Repetitive peak reverse voltage
Continues forward current for Rth(j-c,max) TC = 168°C, D=1 TC = 135°C, D=1 TC = 25°C, D=1 Surge non-repetitive forward current, sine halfwave TC=25°C, tp=10ms TC=150°C, tp=10ms Non-repetitive peak forward current TC = 25°C, tp=10 µs i²t value TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms Diode dv/dt ruggedness VR=0…960V Power dissipation TC = 25°C
Operating and storage temperature
Soldering temperature, wavesoldering only allowed at leads, 1.6mm (0.063 in.) from case for 10 s Mounting torque M3 and M4 screws
IDH02G120C5
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
Symbol VRRM IF
IF,SM
IF,max ∫ i²dt dv/dt Ptot Tj;Tstg Tsold M
Value 1200
2 5.7 11.8
37 31 344
7 4.9 80 75 -55…175
260
0.7
Unit V
A
A
A A²s V/ns W °C °C Nm
Thermal Resistances
Parameter
Characteristic Diode thermal resistance, junction – case Thermal resistance, junction – ambient
Symbol Conditions
Rth(j-c) Rth(j-a) leaded
min.
Value typ.
Unit max.
-
1.54
2
K/W
-
-
62
K/W
Final Data Sheet
4
Rev. 2.1, 2017-07-21
IDH02G120C5
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
Electrical Characterics
Static Characteristics, at Tj=25°C, unless otherwise specified
Parameter
Symbol Conditions
Static Characteristic DC blocking voltage Diode forward voltage
Reverse current
VDC
Tj = 25°C
VF
IF= 2A, Tj=25°C IF= 2A, Tj=150°C
IR
VR=1200V, Tj=25°C VR=1200V, Tj=150°C
min.
Value typ.
Unit max.
1200
-
-
V
-
1.4
1.65
-
1.7
2.3
V
1.2
18
6
90
µA
Dynamic Characteristics, at Tj=25°C, unless otherwise specified
Parameter
Symbol Conditions
Dynamic Characteristics Total capacitive charge
QC
Total Capacitance
C
VR=800V, Tj=150°C
VR
QC C(V )dV
0
VR=1 V, f=1 MHz VR=400 V, f=1 MHz VR=800 V, f=1 MHz
min.
Value typ.
Unit max.
-
14
-
nC
-
182
-
-
13
-
pF
-
10
-
Final Data Sheet
5
Rev. 2.1, 2017-07-21
Electrical Characteristics Dia.