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IDH02G120C5 Dataheets PDF



Part Number IDH02G120C5
Manufacturers Infineon
Logo Infineon
Description Diode
Datasheet IDH02G120C5 DatasheetIDH02G120C5 Datasheet (PDF)

Diode Silicon Carbide Schottky Diode IDH02G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Final Datasheet Rev. 2.1 2017-07-21 Industrial Power Control IDH02G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode CoolSiCTM SiC Schottky Diode Features:  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / No forward recovery  Temperature independent switching behavior  Low forward voltage even at high operating temperature  Tight forward voltage dis.

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Diode Silicon Carbide Schottky Diode IDH02G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Final Datasheet Rev. 2.1 2017-07-21 Industrial Power Control IDH02G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode CoolSiCTM SiC Schottky Diode Features:  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / No forward recovery  Temperature independent switching behavior  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance  Extended surge current capability  Specified dv/dt ruggedness  Qualified according to JEDEC1) for target applications  Pb-free lead plating; RoHS compliant Benefits  System efficiency improvement over Si diodes  Enabling higher frequency / increased power density solutions  System size / cost savings due to reduced heatsink requirements and smaller magnetics  Reduced EMI  Highest efficiency across the entire load range  Robust diode operation during surge events  High reliability  RelatedLinks: www.infineon.com/sic Applications  Solar inverters  Uninterruptable power supplies  Motor drives  Power Factor Correction Package pin definitions  Pin 1 and backside – cathode  Pin 2 – anode Key Performance and Package Parameters Type IDH02G120C5 VDC IF 1200V 2A 1) J-STD20 and JESD22 Final Data Sheet QC 14nC Tj,max Marking 175°C D0212C5 Package PG-TO220-2-1 2 Rev. 2.1, 2017-07-21 IDH02G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Table of Contents Description ..................................................................................................................................................2 Table of Contents........................................................................................................................................3 Maximum Ratings .......................................................................................................................................4 Thermal Resistances ..................................................................................................................................4 Electrical Characterics ................................................................................................................................5 Electrical Characteristics Diagram ..............................................................................................................6 Package Drawings ......................................................................................................................................9 Revision History ........................................................................................................................................10 Disclaimer .................................................................................................................................................11 Final Data Sheet 3 Rev. 2.1, 2017-07-21 Maximum ratings Parameter Repetitive peak reverse voltage Continues forward current for Rth(j-c,max) TC = 168°C, D=1 TC = 135°C, D=1 TC = 25°C, D=1 Surge non-repetitive forward current, sine halfwave TC=25°C, tp=10ms TC=150°C, tp=10ms Non-repetitive peak forward current TC = 25°C, tp=10 µs i²t value TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms Diode dv/dt ruggedness VR=0…960V Power dissipation TC = 25°C Operating and storage temperature Soldering temperature, wavesoldering only allowed at leads, 1.6mm (0.063 in.) from case for 10 s Mounting torque M3 and M4 screws IDH02G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Symbol VRRM IF IF,SM IF,max ∫ i²dt dv/dt Ptot Tj;Tstg Tsold M Value 1200 2 5.7 11.8 37 31 344 7 4.9 80 75 -55…175 260 0.7 Unit V A A A A²s V/ns W °C °C Nm Thermal Resistances Parameter Characteristic Diode thermal resistance, junction – case Thermal resistance, junction – ambient Symbol Conditions Rth(j-c) Rth(j-a) leaded min. Value typ. Unit max. - 1.54 2 K/W - - 62 K/W Final Data Sheet 4 Rev. 2.1, 2017-07-21 IDH02G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Electrical Characterics Static Characteristics, at Tj=25°C, unless otherwise specified Parameter Symbol Conditions Static Characteristic DC blocking voltage Diode forward voltage Reverse current VDC Tj = 25°C VF IF= 2A, Tj=25°C IF= 2A, Tj=150°C IR VR=1200V, Tj=25°C VR=1200V, Tj=150°C min. Value typ. Unit max. 1200 - - V - 1.4 1.65 - 1.7 2.3 V 1.2 18 6 90 µA Dynamic Characteristics, at Tj=25°C, unless otherwise specified Parameter Symbol Conditions Dynamic Characteristics Total capacitive charge QC Total Capacitance C VR=800V, Tj=150°C VR QC   C(V )dV 0 VR=1 V, f=1 MHz VR=400 V, f=1 MHz VR=800 V, f=1 MHz min. Value typ. Unit max. - 14 - nC - 182 - - 13 - pF - 10 - Final Data Sheet 5 Rev. 2.1, 2017-07-21 Electrical Characteristics Dia.


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