Diode
Silicon Carbide Schottky Diode
IDM08G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Final Datasheet
Rev. 2...
Diode
Silicon Carbide
Schottky Diode
IDM08G120C5
5th Generation thinQ!™ 1200 V SiC
Schottky Diode
Final Datasheet
Rev. 2.0 2015-07-22
Industrial Power Control
SiC
Schottky Diode
IDM08G120C5
5th Generation thinQ!™ 1200 V SiC
Schottky Diode
Features:
Revolutionary semiconductor material - Silicon Carbide No reverse recovery current / No forward recovery Temperature independent switching behavior Low forward voltage even at high operating temperature Tight forward voltage distribution Excellent thermal performance Extended surge current capability Specified dv/dt ruggedness Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant
Benefits
System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI Related Links: www.infineon.com/sic
1 2
Applications
Solar inverters Uninterruptable power supplies Motor drives Power Factor Correction
Package pin definitions
Pin 1 and backside – cathode Pin 2 – anode
Key Performance and Package Parameters
Type IDM08G120C5
VDC 1200V
IF 8A
1) J-STD20 and JESD22
Final Data Sheet
QC 28nC
Tj,max Marking 175°C D0812C5
Package PG-TO252-2
2 Rev. 2.0, 2015-07-22
IDM08G120C5
5th Generation thinQ!™ 1200 V SiC
Schottky Diode
Table of Contents Description…. ................................