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IDM10G120C5 Dataheets PDF



Part Number IDM10G120C5
Manufacturers Infineon
Logo Infineon
Description Diode
Datasheet IDM10G120C5 DatasheetIDM10G120C5 Datasheet (PDF)

Diode Silicon Carbide Schottky Diode IDM10G120C5 5th Generation thinQ!™ 1200 V SiC Schottky Diode Final Datasheet Rev. 2.0 2015-22-07 Industrial Power Control SiC Schottky Diode IDM10G120C5 5th Generation thinQ!™ 1200 V SiC Schottky Diode Features:  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / No forward recovery  Temperature independent switching behavior  Low forward voltage even at high operating temperature  Tight forward voltage distribution .

  IDM10G120C5   IDM10G120C5



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Diode Silicon Carbide Schottky Diode IDM10G120C5 5th Generation thinQ!™ 1200 V SiC Schottky Diode Final Datasheet Rev. 2.0 2015-22-07 Industrial Power Control SiC Schottky Diode IDM10G120C5 5th Generation thinQ!™ 1200 V SiC Schottky Diode Features:  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / No forward recovery  Temperature independent switching behavior  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance  Extended surge current capability  Specified dv/dt ruggedness  Qualified according to JEDEC1) for target applications  Pb-free lead plating; RoHS compliant Benefits  System efficiency improvement over Si diodes  System cost / size savings due to reduced cooling requirements  Enabling higher frequency / increased power density solutions  Higher system reliability due to lower operating temperatures  Reduced EMI  Related Links: www.infineon.com/sic 1 2 Applications  Solar inverters  Uninterruptable power supplies  Motor drives  Power Factor Correction Package pin definitions  Pin 1 and backside – cathode  Pin 2 – anode Key Performance and Package Parameters Type VDC IF 1) J-STD20 and JESD22 Final Data Sheet QC 2 Tj,max Marking Package Rev. 2.0, 2015-22-07 IDM10G120C5 5th Generation thinQ!™ 1200 V SiC Schottky Diode IDM10G120C5 1200V 10A 41nC 175°C D1012C5 PG-TO252-2 Table of Contents Description…. .............................................................................................................................................2 Table of Contents........................................................................................................................................3 Maximum ratings.........................................................................................................................................4 Thermal Resistances ..................................................................................................................................4 Electrical Characteristics.............................................................................................................................5 Electrical Characteristics diagram ..............................................................................................................5 Package Drawings ......................................................................................................................................9 Revision History ........................................................................................................................................10 Disclaimer…..............................................................................................................................................10 1) J-STD20 and JESD22 Final Data Sheet 3 Rev. 2.0, 2015-22-07 IDM10G120C5 5th Generation thinQ!™ 1200 V SiC Schottky Diode Maximum ratings Parameter.


IDM08G120C5 IDM10G120C5 ISL6296A


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