Document
Diode
Silicon Carbide Schottky Diode
IDM10G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Final Datasheet
Rev. 2.0 2015-22-07
Industrial Power Control
SiC Schottky Diode
IDM10G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Features:
Revolutionary semiconductor material - Silicon Carbide No reverse recovery current / No forward recovery Temperature independent switching behavior Low forward voltage even at high operating temperature Tight forward voltage distribution Excellent thermal performance Extended surge current capability Specified dv/dt ruggedness Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant
Benefits
System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI Related Links: www.infineon.com/sic
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Applications
Solar inverters Uninterruptable power supplies Motor drives Power Factor Correction
Package pin definitions
Pin 1 and backside – cathode Pin 2 – anode
Key Performance and Package Parameters
Type
VDC
IF
1) J-STD20 and JESD22
Final Data Sheet
QC 2
Tj,max Marking
Package
Rev. 2.0, 2015-22-07
IDM10G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
IDM10G120C5
1200V
10A
41nC
175°C D1012C5 PG-TO252-2
Table of Contents Description…. .............................................................................................................................................2 Table of Contents........................................................................................................................................3 Maximum ratings.........................................................................................................................................4 Thermal Resistances ..................................................................................................................................4 Electrical Characteristics.............................................................................................................................5 Electrical Characteristics diagram ..............................................................................................................5 Package Drawings ......................................................................................................................................9 Revision History ........................................................................................................................................10 Disclaimer…..............................................................................................................................................10
1) J-STD20 and JESD22 Final Data Sheet
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Rev. 2.0, 2015-22-07
IDM10G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Maximum ratings
Parameter.