SILICON TRANSISTOR. 13005EC Datasheet

13005EC Datasheet PDF, Equivalent


Part Number

13005EC

Description

NPN SILICON TRANSISTOR

Manufacture

Unisonic Technologies

Total Page 4 Pages
PDF Download
Download 13005EC Datasheet PDF


13005EC Datasheet
UNISONIC TECHNOLOGIES CO., LTD
13005EC
Preliminary
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTORS
DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220 V SWITCHMODE.
FEATURES
* VCES = 850 V
* Reverse bias SOA with inductive loads @ TC = 100°С
* Inductive switching matrix 2 to 4 Amp, 25 and 100°С
tC @ 3A, 100°С is 180 ns (Typ)
* 850V blocking capability
* SOA and switching applications information
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/Relay drivers
* Deflection circuits
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
13005ECL-x-TM3-T
13005ECG-x-TM3-T
13005ECL-x-T60-F-K
13005ECG-x-T60-F-K
Note: Pin Assignment: B: Base C: Collector E: Emitter
Package
TO-251
TO-126
Pin Assignment
123
BCE
BCE
Packing
Tube
Bulk
13005ECL-T60-F-B
(1)Packing Type
(1) T: Tube, B: Bluk
(2)Pin Assignment
(2) refer to Pin Assignment
(3)Package Type
(3) TM3: TO-251, T60: TO-126
(4)Green Package
(4) L: Lead Free, G: Halogen Free and Lead Free
MARKING INFORMATION
TO-251
TO-126
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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13005EC Datasheet
13005EC
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO(SUS)
400
V
Collector-Emitter Voltage (VBE=0)
VCES
850 V
Collector-Base Voltage
VCBO
850 V
Emitter Base Voltage
VEBO
9V
Collector Current
Continuous
Peak (1)
IC
ICM
4A
8A
Base Current
Continuous
Peak (1)
IB
IBM
2A
4A
Emitter Current
Continuous
Peak (1)
IE
IEM
6A
12 A
Power Dissipation at TC=25°С
TO-251
TO-126
PD
10 W
8W
Junction Temperature
TJ
-65 ~ +150
°С
Storage Temperature Range
TSTG
-65 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-251
TO-126
TO-251
TO-126
SYMBOL
θJA
θJC
RATINGS
95
100
13
16.25
UNIT
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R213-022.f


Features Datasheet pdf UNISONIC TECHNOLOGIES CO., LTD 13005EC Preliminary NPN SILICON TRANSISTOR N PN SILICON POWER TRANSISTORS  DESCR IPTION These devices are designed for high-voltage, high-speed power switchin g inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.  FEA TURES * VCES = 850 V * Reverse bias SO A with inductive loads @ TC = 100°С * Inductive switching matrix 2 to 4 Amp, 25 and 100°С tC @ 3A, 100°С is 180 ns (Typ) * 850V blocking capability * SOA and switching applications informat ion  APPLICATIONS * Switching regu lator’s, inverters * Motor controls * Solenoid/Relay drivers * Deflection ci rcuits  ORDERING INFORMATION Order ing Number Lead Free Halogen Free 13 005ECL-x-TM3-T 13005ECG-x-TM3-T 13005 ECL-x-T60-F-K 13005ECG-x-T60-F-K Note : Pin Assignment: B: Base C: Collector E: Emitter Package TO-251 TO-126 Pin Assignment 123 BCE BCE Packing Tube Bu lk 13005ECL-T60-F-B (1)Packing Type (1) T: Tube, B: Bluk (2)Pin Assignment .
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