2SK3666

UNISONIC TECHNOLOGIES CO., LTD 2SK3666 Preliminary N-CHANNEL JUNCTIN SILICON FET JFET  DESCRIPTION The UTC 2SK3666 is an N-channel junctin silicon FET, it uses UTC’s advanced technology to provide the customers with low IGSS and low CRSS. The UTC 2SK3666 is suitable for low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.  FEATURES * Low IGSS * Low CRSS  ORDERING INFORMATION Ordering Number 2SK3666G-AE3-R Note: Pin Assignment: A: Anode K: Cathode 2SK3666G-AE3-R (1)Packing Type (2)Package Type (3)Green Package  MARKING 3666G Package SOT-23 Pin Assignment 123 SDG Packing Tape Reel (1) R: Tape Reel (2) AE3: SOT-23 (3) G: Halogen Free and Lead Free www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-109.a 2SK3666 Preliminary JFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Drain Voltage VDSS VGDS 30 -30 V V Gate Current Drain Current Continuous IG ID 10 mA 10 mA Power Dissipation Junction Temperature PD 200 mW TJ 150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Gate-Drain Breakdown Voltage Drain-...