MT3258B

 MT3258/B 1&KDQQHO9$3RZHU026)(7 )HDWXUHV ‡ Max RDS(on)=5m: at VGS =10V,ID =85A ‡ Fast Switching Speed ‡ Low Gate Charge ‡100% avalanche tested *HQHUDO'HVFULSWLRQ 7KLV1&KDQQHO026)(7LVSURGXFHGXVLQJ0267(&+ 6HPLFRQGXFWRU¶VDGYDQFHG3RZHU7UHQFKSURFHVVWKDWKDV EHHQ HVSHFLDOO\ WDLORUHG WR PLQLPL]H WKH RQVWDWH UHVLVWDQFH DQG \HW PDLQWDLQVXSHULRUVZLWFKLQJSHUIRUPDQFH $SSOLFDWLRQV ‡ '&'&SULPDU\EULGJH ‡ '&'&6\QFKURQRXVUHFWLILFDWLRQ ‡3RZHU0DQDJHPHPHQWIRU,QYHUWHU6\VWHPV G DS G  D S TO-252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current   TC=25°C Rating Unit 80 ±25 175 -55 to 175 170 V °C °C A ZZZPWVHPLFRP Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings EAS Avalanche Energy, Single Pulsed L=0.5mH Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=64V 660** 170 114 288 144 0.52 62.5 1168*** Electrical Characteristics (TC = 25°C Unless Otherwise Noted) MT3258/B A A W °C/W mJ Symbol Parameter Te...