MJE13001-Q

UNISONIC TECHNOLOGIES CO., LTD MJE13001-Q NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package - MJE13001G-Q-x-AB3-A-R SOT-89 - MJE13001G-Q-x-AB3-F-R SOT-89 MJE13001L-Q-x-T92-F-B MJE13001G-Q-x-T92-F-B TO-92 MJE13001L-Q-x-T92-F-K MJE13001G-Q-x-T92-F-K TO-92 Note: Pin assignment: B: Base C: Collector E: Emitter Pin Assignment 123 ECB BCE BCE BCE Packing Tape Reel Tape Reel Tape Box Bulk  MARKING SOT-89 Lot Code MJE13001G 1 Date Code TO-92 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R221-023.B MJE13001-Q NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO 400 V Collector-Base Voltage VCBO 600 V Emitter Base Voltage VEBO 7 V Collector Current IC 200 mA Collector Power Dissipation SOT-89 TO-92 PC 550 750 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Base-Emitter Voltage Collector Cutof...