UNISONIC TECHNOLOGIES CO., LTD
MJE13009-Q
Preliminary
NPN SILICON TRANSISTOR
NPN BIPOLAR POWER TRANSISTOR FOR SWITCH...
UNISONIC TECHNOLOGIES CO., LTD
MJE13009-Q
Preliminary
NPN SILICON
TRANSISTOR
NPN BIPOLAR POWER
TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
DESCRIPTION
The UTC MJE13009-Q is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch mode applications.
FEATURES
* VCEO(SUS) 400V * 700V Blocking Capability
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MJE13009L-Q-TA3-T MJE13009G-Q-TA3-T
Note: Pin Assignment: E: Emitter
C: Collector
Package
TO-220 B: Base
Pin Assignment 123 BCE
Packing Tube
MJE13009L-Q-TA3-T
(1)Packing Type (2)Package Type (3)Green Package
(1) T: Tube (2) TA3: TO-220 (3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 4
QW-R223-026.a
MJE13009-Q
Preliminary
NPN SILICON
TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Sustaining Voltage
VCEO
400 V
Collector-Emitter Breakdown Voltage
VCBO
700 V
Emitter-Base Voltage
VEBO
9.0 V
Collector Current
Continuous Peak (1)
IC ICM
8.0 A 16 A
Base Current
Continuous Peak (1)
IB IBM
4.0 A 8.0 A
Emitter Current
Continuous Peak (1)
IE IEM
12 A 24 A
Power Dissipation (TC = 25°C)
PD 80 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permane...