DatasheetsPDF.com

MMDT2907A Dataheets PDF



Part Number MMDT2907A
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description DUAL TRANSISTOR
Datasheet MMDT2907A DatasheetMMDT2907A Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD MMDT2907A Preliminary DUAL TRANSISTOR NPN & PNP GENERAL PURPOSE AMPLIFIER  DESCRIPTION The UTC MMDT2907A is an NPN & PNP general purpose amplifier. it’s suitable for a medium power amplifier and switch requiring collector currents up to 500mA.  FEATURES * Low VCE(SAT * High collector current gain under high collector current condition  EQUIVALENT CIRCUIT  ORDERING INFORMATION Ordering Number MMDT2907AG-AL6-R Package SOT-363 1 Pin Assignment 2345 6 Pa.

  MMDT2907A   MMDT2907A


Document
UNISONIC TECHNOLOGIES CO., LTD MMDT2907A Preliminary DUAL TRANSISTOR NPN & PNP GENERAL PURPOSE AMPLIFIER  DESCRIPTION The UTC MMDT2907A is an NPN & PNP general purpose amplifier. it’s suitable for a medium power amplifier and switch requiring collector currents up to 500mA.  FEATURES * Low VCE(SAT * High collector current gain under high collector current condition  EQUIVALENT CIRCUIT  ORDERING INFORMATION Ordering Number MMDT2907AG-AL6-R Package SOT-363 1 Pin Assignment 2345 6 Packing E1 B1 C2 E2 B2 C1 Tape Reel MMDT2907AG-AL6-R (1)Packing Type (2)Package Type (3)Green Package (1) R: Tape Reel (2) AL6: SOT-363 (3) G: Halogen Free and Lead Free  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R218-028.b MMDT2907A Preliminary DUAL TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) (Note 1, 2) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage TR1 TR2 VCEO 30 -30 V V Collector-Base Voltage TR1 TR2 VCBO 60 -60 V V Emitter-Base Voltage TR1 TR2 VEBO 5.0 -5.0 V V Collector Current - Continuous TR1 TR2 IC 500 -500 mA mA Total Device Dissipation Derate above 25°C PD 300 mW 2.4 mW/°C Junction Temperature Storage Temperature TJ TSTG -55~+150 -55~+150 °C °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired 3. All voltages (V) and currents (A) are negative polarity for PNP transistors.  THERMAL DATA (TA=25°C, unless otherwise noted) PARAMETER Thermal Resistance, Junction to Ambient SYMBOL θJA RATINGS 415  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted) (Note 2) UNIT °C/W TR1 PARAMETER OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain Collector-Emitter Saturation Voltage (Note 1) Base-Emitter Saturation Voltage (Note 1) SMALL SIGNAL CHARACTERISTICS Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure SYMBOL TEST CONDITIONS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO IC=10mA, IB=0 IC=10µA, IE=0 IE=10µA, IC=0 VCB=50V, IE=0 VEB=3.0V, IC=0 hFE VCE(sat) VBE(sat) IC=1.0mA, VCE=10V IC=10mA, VCE=10V IC=150mA, VCE=10V (Note 1) IC=300mA, VCE=10V (Note 1) IC=150mA, IB=15mA IC=300mA, IB=30mA IC=150mA, IB=15mA fT COBO CIBO NF IC=50mA, VCE=20V, f=100MHz VCB=10V, IE=0, f=100kHz VEB=2.0V, IC=0, f=100kHz IC=100µA, VCE=10V, RS=1.0kΩ, f=1.0kHz MIN TYP MAX UNIT 30 V 60 V 5.0 V 30 nA 30 nA 50 75 100 30 0.4 V 1.4 V 1.3 V 250 MHz 4.0 pF 12 pF 2.0 dB UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R218-028.b MMDT2907A Preliminary DUAL TRANSISTOR  ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS SWITCHING CHARACTERISTICS Turn-on Time Delay Time Rise Time tON tD tR VCC=30V, IC=150mA, IB1=15mA Turn-off Time Storage Time Fall Time tOFF tS tF VCC=6.0V, IC=150mA, IB1=IB2=15mA Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0% 2. All voltages (V) and currents (A) are negative polarity for PNP transistors. MIN TYP MAX UNIT 30 ns 8.0 ns 20 ns 80 ns 60 ns 20 ns TR2 PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) V(BR)CEO IC=-10mA, IB=0 Collector-Base Breakdown Voltage V(BR)CBO IC=-10µA, IE=0 Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)EBO IE=-10µA, IC=0 ICBO VCB=-50V, IE=0 Emitter Cutoff Current IEBO VEB=-3.0V, IC=0 ON CHARACTERISTICS DC Current Gain IC=-1.0mA, VCE=-10V hFE IC=-10mA, VCE=-10V IC=-150mA, VCE=-10V (Note 1) IC=-300mA, VCE=-10V (Note 1) Collector-Emitter Saturation Voltage (Note 1) VCE(sat) IC=-150mA, IB=-15mA IC=-300mA, IB=-30mA Base-Emitter Saturation Voltage (Note 1) VBE(sat) IC=-150mA, IB=-15mA SMALL SIGNAL CHARACTERISTICS Current Gain - Bandwidth Product fT IC=-50mA, VCE=-20V, f=100MHz Output Capacitance COBO VCB=-10V, IE=0, f=100kHz Input Capacitance Noise Figure CIBO NF VEB=-2.0V, IC=0, f=100kHz IC=-100µA, VCE=-10V, RS=1.0kΩ, f=1.0kHz SWITCHING CHARACTERISTICS Turn-on Time Delay Time Rise Time tON tD tR VCC=-30V, IC=-150mA, IB1=-15mA Turn-off Time Storage Time Fall Time tOFF tS tF VCC=6.0V, IC=-150mA, IB1=IB2=-15mA Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0% 2. All voltages (V) and currents (A) are negative polarity for PNP transistors. -30 -60 -5.0 50 75 100 30 TYP 250 4.0 12 2.0 30 8.0 20 80 60 20 MAX UNIT V V V -30 nA -30 nA -0.4 V -1.4 V -1.3 V MHz pF pF dB ns ns ns ns ns ns UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R218-028.b MMDT2907A Preliminary DUAL TRANSISTOR UTC assumes no responsibility for equipment failures that result.


MJE13009-Q MMDT2907A MN2510


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)