Document
UNISONIC TECHNOLOGIES CO., LTD
MMDT2907A
Preliminary
DUAL TRANSISTOR
NPN & PNP GENERAL PURPOSE AMPLIFIER
DESCRIPTION
The UTC MMDT2907A is an NPN & PNP general purpose amplifier. it’s suitable for a medium power amplifier and switch requiring collector currents up to 500mA.
FEATURES
* Low VCE(SAT * High collector current gain under high collector current condition
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number MMDT2907AG-AL6-R
Package SOT-363
1
Pin Assignment 2345
6
Packing
E1 B1 C2 E2 B2 C1 Tape Reel
MMDT2907AG-AL6-R
(1)Packing Type (2)Package Type
(3)Green Package
(1) R: Tape Reel (2) AL6: SOT-363 (3) G: Halogen Free and Lead Free
MARKING
www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R218-028.b
MMDT2907A
Preliminary
DUAL TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) (Note 1, 2)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
TR1 TR2
VCEO
30 -30
V V
Collector-Base Voltage
TR1 TR2
VCBO
60 -60
V V
Emitter-Base Voltage
TR1 TR2
VEBO
5.0 -5.0
V V
Collector Current - Continuous
TR1 TR2
IC
500 -500
mA mA
Total Device Dissipation Derate above 25°C
PD
300 mW 2.4 mW/°C
Junction Temperature Storage Temperature
TJ TSTG
-55~+150 -55~+150
°C °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.
THERMAL DATA (TA=25°C, unless otherwise noted)
PARAMETER Thermal Resistance, Junction to Ambient
SYMBOL θJA
RATINGS 415
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted) (Note 2)
UNIT °C/W
TR1 PARAMETER
OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage (Note 1)
Base-Emitter Saturation Voltage (Note 1) SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure
SYMBOL
TEST CONDITIONS
V(BR)CEO V(BR)CBO V(BR)EBO
ICBO IEBO
IC=10mA, IB=0 IC=10µA, IE=0 IE=10µA, IC=0 VCB=50V, IE=0 VEB=3.0V, IC=0
hFE
VCE(sat) VBE(sat)
IC=1.0mA, VCE=10V IC=10mA, VCE=10V IC=150mA, VCE=10V (Note 1) IC=300mA, VCE=10V (Note 1) IC=150mA, IB=15mA IC=300mA, IB=30mA IC=150mA, IB=15mA
fT
COBO CIBO
NF
IC=50mA, VCE=20V, f=100MHz
VCB=10V, IE=0, f=100kHz VEB=2.0V, IC=0, f=100kHz IC=100µA, VCE=10V, RS=1.0kΩ, f=1.0kHz
MIN TYP MAX UNIT
30 V 60 V 5.0 V
30 nA 30 nA
50 75 100 30
0.4 V 1.4 V 1.3 V
250 MHz
4.0 pF 12 pF
2.0 dB
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R218-028.b
MMDT2907A
Preliminary
DUAL TRANSISTOR
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING CHARACTERISTICS
Turn-on Time Delay Time Rise Time
tON tD tR
VCC=30V, IC=150mA, IB1=15mA
Turn-off Time Storage Time Fall Time
tOFF tS tF
VCC=6.0V, IC=150mA, IB1=IB2=15mA
Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0%
2. All voltages (V) and currents (A) are negative polarity for PNP transistors.
MIN TYP MAX UNIT
30 ns 8.0 ns 20 ns 80 ns 60 ns 20 ns
TR2 PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 1) V(BR)CEO IC=-10mA, IB=0
Collector-Base Breakdown Voltage
V(BR)CBO IC=-10µA, IE=0
Emitter-Base Breakdown Voltage Collector Cutoff Current
V(BR)EBO IE=-10µA, IC=0 ICBO VCB=-50V, IE=0
Emitter Cutoff Current
IEBO VEB=-3.0V, IC=0
ON CHARACTERISTICS
DC Current Gain
IC=-1.0mA, VCE=-10V
hFE
IC=-10mA, VCE=-10V IC=-150mA, VCE=-10V (Note 1)
IC=-300mA, VCE=-10V (Note 1)
Collector-Emitter Saturation Voltage (Note 1)
VCE(sat)
IC=-150mA, IB=-15mA IC=-300mA, IB=-30mA
Base-Emitter Saturation Voltage (Note 1)
VBE(sat) IC=-150mA, IB=-15mA
SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product
fT
IC=-50mA, VCE=-20V, f=100MHz
Output Capacitance
COBO VCB=-10V, IE=0, f=100kHz
Input Capacitance Noise Figure
CIBO NF
VEB=-2.0V, IC=0, f=100kHz IC=-100µA, VCE=-10V, RS=1.0kΩ, f=1.0kHz
SWITCHING CHARACTERISTICS
Turn-on Time Delay Time Rise Time
tON tD tR
VCC=-30V, IC=-150mA, IB1=-15mA
Turn-off Time Storage Time Fall Time
tOFF tS tF
VCC=6.0V, IC=-150mA, IB1=IB2=-15mA
Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0%
2. All voltages (V) and currents (A) are negative polarity for PNP transistors.
-30 -60 -5.0
50 75 100 30
TYP
250 4.0 12 2.0 30 8.0 20 80 60 20
MAX UNIT
V V V -30 nA -30 nA
-0.4 V -1.4 V -1.3 V
MHz pF pF dB
ns ns ns ns ns ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R218-028.b
MMDT2907A
Preliminary
DUAL TRANSISTOR
UTC assumes no responsibility for equipment failures that result.