P2H4M441L

MOSFET 30A 450～500V PD4M441L PD4M440L P2H4M441L P2H4M440L PD4M441L/440L P2H4M441L/440L 108.0 108.0 Approximate Weight :220g Maximum Ratings Approximate Weight :220g Rating Drain-Source Voltage Symbol VDSS PD4M441L/P2H4M441L 450 VGS=0V Grade PD4M440L/P2H4M440L 500 Unit V Gate-Source Voltage Continuous Drain Current Duty=50% D.C. VGSS ID 20 30 c=25 21 c=25 V A Pulsed Drain Current IDM 60 c=25 A Total Power Dissipation PD 230 c=25 W Operating Junction Temperature Range Tjw 40 +150 Storage Temperature Range RMS Isolation Voltage Mountin1g Torque Tstg Viso - Ftor 3.0 2.0 40 +125 2000 ,AC1 Terminals to Base, AC 1 min . Module Base to Heat sink Bus bar to Main Terminals V Nm Fig. 1 Typical Output Characteristics 50 TC=25ı 250 s Pulse Test 10V 40 6V Fig. 2 Typical Drain-Source On-Voltage Fig. 2 Vs. Gate-Source Voltage 8 TC=25ı 250 s Pulse Test ID=30A 6 Fig. 3 Typical Drain-Source On Voltage Fig. 3 Vs. Junction Temperature VGS=10V 250 s Pulse Test 0.50 ID=30A 15A 0.42 10A DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) DRAIN CURRENT ID (A) CAPACITANCE C (nF) 30 20 VGS=5V 10 0 4V 0 2 4 6 8 10 12 DRAIN TO SOURCE VOLTAGE VDS (V) Fig. 4 Typical Capacitance Fig. 4 Vs. Drain-Source Voltage 12 VGS=0V f=1kHz 10 8 Ciss 6 Coss 4 2 Crss GATE TO SOURCE VOLTAGE VGS (V) 4 15A 2 10A 0 0 4 8 12 16 GATE TO SOURCE VOLTAGE VGS (V) Fig. 5 Typical Gate Charge Fig. 5 Vs. Gate-Source Voltage 16 ID=20A VDD= 100V 250V 400V 12 8 4...