IGBT
IGBT Module-Single
□ : CIRCUIT
(E) 4
(G) 3
(E) 2
(C) 1
80
600A,600V
□ : OUTLINE DRAWING
110 93 ± 0.25
4
...
Description
IGBT Module-Single
□ : CIRCUIT
(E) 4
(G) 3
(E) 2
(C) 1
80
600A,600V
□ : OUTLINE DRAWING
110 93 ± 0.25
4
4 - Ø6.5 2 -M8 4 - Ø6.5
2 -M6
1 2
20 20 62 ±0.25 48
20
3
2 -M4 13 21
29
2 -M4
QS043-402-20394 (2/5)
PHMB600E6 PHMB600E6C
108 93 9
4 3
2
1
24 20 11
29
7 14 23 13 16 62
7 23 25.5
+1.036 - 0.5
+125.5 .0 - 0.5
LABEL
LABEL
PH MB600E6
PH MB600E6C
□ : MAXIMUM RATINGS (TC=25℃)
Item
Symbol
Rated Value
Unit
コレクタ・エミッタ Collector-Emitter Voltage
VCES
600
V
ゲ ー ト・エ ミ ッ タ Gate-Emitter Voltage
VGES
±20
V
コレクタ Collector Current
DC 1ms
600 1,200
600 1,200
A
コレクタ Collector Power Dissipation
PC
2,080
W
Junction Temperature Range
Tj
-40~+150
℃
Storage Temperature Range
Tstg
-40~+125
℃
(Terminal to Base AC,1minute) Isolation Voltage
VISO
2,500
V(RMS)
め け ト ル ク Module Base to Heatsink
Mounting Torque
Busbar to Terminals
Ftor
PHMB600E6
3(30.6) M4 1 4(14 3) PHMB600E6C
M8 10 5(107)
3(30.6)
N・m
M4 1 4(14 3) (kgf・cm)
M6 3(30 6)
□ : ELECTRICAL CHARACTERISTICS (TC=25℃)
Characteristic
Symbol Test Condition Min. Typ. Max. Unit
コレクタ Collector-Emitter Cut-Off Current
ICES
VCE= 600V, VGE= 0V
- - 1.0 mA
ゲートれ Gate-Emitter Leakage Current
IGES
VGE= ±20V,VCE= 0V
- - 1.0 μA
コレクタ・エミッタ Collector-Emitter Saturation Voltage
VCE(sat) IC= 600A,VGE= 15V
-
2.1 2.6
V
ゲ ー ト しきい Gate-Emitter Threshold Voltage
VGE(th)
VCE= 5V,IC= 600mA
4.0
-
8.0
V
Input Capacitance
Cies
VCE= 10V,VGE= 0V,f= 1MHZ
- 30,...
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