IGBT
Capacitance C (pF)
Collector to Emitter Voltage V CE (V)
Collector Current I C (A)
100
VGE = 2 0 V
12V
15V
75
50...
Description
Capacitance C (pF)
Collector to Emitter Voltage V CE (V)
Collector Current I C (A)
100
VGE = 2 0 V
12V
15V
75
50
TC=25 10V
9V
8V 25
7V 0
0 2 4 6 8 10 Collector to Emitter Voltage VCE (V)
TC=125 16
IC=25A
100A
14
50A 12
10
8
6
4
2
0 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V)
20000 10000
5000
Cies
VGE=0V f=1MHZ TC=25
2000 1000
500
Coes
200 Cres
100
50
20 0.1 0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
Switching Time t (s)
Collector to Emitter Voltage V CE (V)
Collector to Emitter Voltage V CE (V)
TC=25 16
I C= 2 5 A
100A
14 50A
12
10
8
6
4
2
0 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V)
800 RL=12 TC=25
700
600
500
400
300
200
100
0 0 50
16
14
12
10
VCE=600V
400V 200V
8 6 4 2
0 100 150 200 250 300 350
Total Gate Charge Qg (nC)
1.4
1.2
tOFF
1
VCC=600V
RG=20 VGE=15V TC=25
0.8
0.6 tf
0.4
tON
0.2
tr
0 0 10 20 30 40 Collector Current IC (A)
50
Gate to Emitter Voltage VGE (V)
Transient Thermal Impedance Rth (J-C) (/W)
Switching Time t (s)
10 VCC=600V IC=50A
5 VGE=15V TC=25
2
1
0.5
0.2 0.1 0.05
5
10 20
50 100
Series Gate Impedance RG ()
toff ton
tr tf
200 300
Collector Current I C (A)
500
200 100
50
20 10
5
2 1 0.5
0.2 0.1
0
5
2 1 5x10 -1
IGBT
2x10 -1 1x10 -1 5x10 -2
2x10 -2
1x10 -2 5x10 -3
TC= 2 5 1 Shot Pulse
2x10 -3
10 -5
10 -4
10 -3
10 -2
10 -1
1
10 1
Time t (s)
RG= 2 0 VGE = 1 5 V TC125
400 800 1200 Collector to Emitter Voltage V CE (V)
1600
...
Similar Datasheet
- PHMB50B12CL IGBT - Nihon Inter Electronics