SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION ·With TO-126 package ·Complement t...
SavantIC Semiconductor
Silicon
PNP Power
Transistors
www.DataSheet4U.com
DESCRIPTION ·With TO-126 package ·Complement to type 2SD1378 ·High breakdown voltage
APPLICATIONS ·Low frequency power amplification
PINNING PIN 1 2 3
DESCRIPTION
Emitter Collector;connected to mounting base Base
Product Specification
2SB1007
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
PD Total power dissipation
Tj Junction temperature Tstg Storage temperature
CONDITIONS Open emitter Open base Open collector
Ta=25 TC=25
VALUE -80 -80 -5 -0.7 1.2 10 150
-55~150
UNIT V V V A
W
SavantIC Semiconductor
Silicon
PNP Power
Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-2mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-50µA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-50µA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA
ICBO Collector cut-off current IEBO Emitter cut-off current
VCB=-50V; IE=0 VEB=-4V; IC=0
hFE DC current gain
IC=-0.1A ; VCE=-3V
COB Output capacitance
IE=0; VCB=-10V;f=1MHz
fT Transition frequency
IE=50mA ; VCE=-10V
Product Specification
2SB1007
MIN TYP. MAX UNIT
-80 V
-80 V
-5 V
-0.2 -0.4
V
-0.5 µA
-0.5 µA
82 390
14 20 pF
100 MHz
hFE Classifications PQ
82-180
120-270
R 180-390
2
Savant...