2N7002KDW-AU

2N7002KDW-AU 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES RDS(ON), VGS@10V,IDS@500mA=3Ω RDS(ON), VGS@4.5V,IDS@200mA=4Ω Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. ESD Protected 2KV HBM Acqire quality system certificate : TS16949 AEC-Q101 qualified Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA Case: SOT-363 Package Terminals: Solderable per MIL-STD-750,Method 2026 Approx. Weight: 0.0002 ounces, 0.006 grams Marking: K27 Maximum RATINGS and Thermal Characteristics (T =25OC unless otherwise noted ) A 654 123 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous D rain C urrent ID Pulsed Drain Current 1) Maximum Power Dissipation Operating Junction and Storage Temp er at ur e R a ng e T A= 2 5 OC T A= 7 5 OC Junction-to Ambient Thermal Resistance (PCB mounted)2 I DM PD TJ, TSTG RθJA Limit 60 +20 115 800 200 120 -55 to +150 625 Note:1.Maximum DC current limited by the package 2.Surface mounted on FR4 board, t<10 sec 3.Pulse width<300us, Duty cycle<2% Uni t s V V mA mA mW OC OC/W May 13,2015-REV.03 PAGE . 1 2N7002KDW-AU ELECTRICALCHARACTERISTICS Parameter Static Drain-Source B reakdown Voltage...