2SA1693

UNISONIC TECHNOLOGIES CO., LTD 2SA1693 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2SA1693 is a silicon PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SA1693 is suitable for audio and general purpose, etc.  FEATURES * High DC current gain * High collector-base breakdown voltage  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SA1693L-x-T3P-T 2SA1693G-x-T3P-T Note: Pin Assignment: B: Base C: Collector E: Emitter Package TO-3P Pin Assignment 123 BCE Packing Tube  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R214-017.c 2SA1693 Preliminary PNP EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO -80 V VCEO -80 V Emitter-Base Voltage Collector Current VEBO -6 V IC -6 A Base Current Collector Power Dissipation (TC=25°C) IB Pc -3 A 60 W Junction Temperature Storage Temperature TJ TSTG 150 -55 ~150 °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER C...