P2SB1427W6
PNP Low Vce(sat) Transistor
Voltage
20V Current
3A
Features
Silicon PNP epitaxial type Low Vce(sat)...
P2SB1427W6
PNP Low Vce(sat)
Transistor
Voltage
20V Current
3A
Features
Silicon
PNP epitaxial type Low Vce(sat) -0.2V(max)@Ic/Ib=-1.6A/-53mA High collector current capability Excellent DC current gain characteristics Lead free in compliance with EU RoHS 2011/65/EU
directive. Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L-1 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0005 ounces, 0.014 grams Marking: B27
SOT-23 6L-1
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Power Dissipation Operating Junction and Storage Temperature Range Typical Thermal Resistance from Junction to Ambient (Note )
Note: Mounted on FR4 PCB at 1 inch square copper pad.
February 25,2015-REV.03
SYMBOL VCBO VCEO VEBO IC ICP IB PD
TJ,TSTG RθJA
LIMIT -20 -20 -7 -3 -5 -0.3 1.2
-55~150 104
UNITS V V V A A A W oC
oC/W
Page 1
P2SB1427W6
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON characteristics
DC Current Gain (Note1)
Collector-Emitter Saturation Voltage (Note1) Base-Emitter Saturation voltage (Note...
