2SD1071

UNISONIC TECHNOLOGIES CO., LTD 2SD1071 Preliminary NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE POWER AMPLIFIER  DESCRIPTION The UTC 2SD1071 is a high voltage power amplifier, it uses UTC advanced technology to provide the customers high DC current gain and low saturation voltage, etc. The UTC 2SD1071 is suitable for general purpose power amplifier and Motor controls, etc.  FEATURES * Low saturation voltage * High DC current gain  EQUIVALENT CIRCUIT C Z-Di B Diode RBE1 RBE2 E  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SD1071L-TA3-T 2SD1071G-TA3-T TO-220 Note: Pin Assignment: E: Emitter C: Collector B: Base Pin Assignment 123 BCE Packing Tube  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 3 QW-R203-043.c 2SD1071 Preliminary NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TC=25°C) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 300 V Collector to Emitter Voltage VCEO 300 V Emitter to Base Voltage VEBO 6 V Collector Current IC 6 A Base Current IB 2.5 A Collector Dissipation PC 40 W Junction Temperature TJ +150 C Storage Temperature TSTG -40~+150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER Junction to Case SYMBOL θJC  ELECTRICAL CHARACTERISTICS (TC =25...