DatasheetsPDF.com

CHV2421-QDG Dataheets PDF



Part Number CHV2421-QDG
Manufacturers United Monolithic Semiconductors
Logo United Monolithic Semiconductors
Description GaAs Monolithic Microwave IC
Datasheet CHV2421-QDG DatasheetCHV2421-QDG Datasheet (PDF)

CHV2421-QDG RoHS compliant 24-24.5GHz Tx Multifunction GaAs Monolithic Microwave IC in SMD leadless package Description The CHV2421-QDG is a monolithic multifunction for dual channel frequency generation. It integrates a X-band “pushpush” oscillator with frequency control thanks to base collector diodes, used as varactors, two K-Band buffers with a “Mute” power control command (M1 ,M2) for each output, and a frequency divider by 8. The circuit is dedicated to sensors and also well suited for a.

  CHV2421-QDG   CHV2421-QDG


Document
CHV2421-QDG RoHS compliant 24-24.5GHz Tx Multifunction GaAs Monolithic Microwave IC in SMD leadless package Description The CHV2421-QDG is a monolithic multifunction for dual channel frequency generation. It integrates a X-band “pushpush” oscillator with frequency control thanks to base collector diodes, used as varactors, two K-Band buffers with a “Mute” power control command (M1 ,M2) for each output, and a frequency divider by 8. The circuit is dedicated to sensors and also well suited for a wide range of microwave and millimeter wave applications and systems. The circuit is manufactured with a standard InGaP HBT process, 2µm emitter length, via holes through the substrate, and high Q passive elements. It is supplied in a 24 leads RoHS compliant QFN4x4 package. UUMMSS AV326468278A1 YYYYWWWWG Plastic package V1, VCC,VB11, VB12 M1 VB21 V_Tune xx 2 2 VB, VD //8 512 P Block Diagram TX1 TX2 VB22 M2 Main Features ■ 24-24.5GHz frequency tuning range ■ -90dB/Hz phase Noise ■ 15dBm typical output power ■ +5V single supply Voltage ■ 24L-QFN 4x4 SMD leadless package ■ MSL1 -40°C +25°C +105°C Main Electrical Characteristics Frequency vs tuning voltage (-40/25/105°C) Tamb.= +25°C Symbol Parameter Freq Frequency range P_TXn Typical output power on both channel PN Phase Noise @ 100kHz PW_TX_16 Prescaler Output Power V_Tune Tuning Voltage Min Typ Max Unit 24 24.5 GHz 15 dBm -90 -80 dBc/Hz 0 dBm 0.5 5.5 V Ref. : CHV2421-QDG2201- 19 Jul 12 1/12 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. 10 Avenue du Québec – SILIC 521 - 91946 Courtaboeuf Cedex France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHV2421-QDG 24-24.5GHz Tx Multifunction Electrical Characteristics Temp.= -40°C to +105°C Symbol Parameter F_TX Output Frequency F_VCO Core VCO frequency V_Tune T_sens F_drift Voltage Tuning within F_TX Tuning sensitivity within F_TX Temperature frequency drift rate H1 H3 H4 Sp_TX Pres_TX PN VSWR_RF LP_RF Push P_TX1 (1) P_TX1_T°C P_TX2 (1) P_TX2_T°C D_P_TXn L_P_TXn P_TX1_LO (2) P_TX2_OFF Harmonics ½ F_TX power (TX1 & TX2 ports) Harmonics 3/2 F_TX power (TX1 & TX2 ports) Harmonics 2 F_TX power (TX1 & TX2 ports) Non-harmonic spurious rejection at TX1, TX2 ports Prescaler spurious rejection at TX1, TX2 ports SSB Phase Noise @ 100KHz at TXn RF Output (TX1, TX2) VSWR RF Load Pulling into 2.5:1 VSWR all phases (Tx1, Tx2) Bias pushing (VCC, VB, VD, V1, VB11, VB12, VB21, VB22, M1, M2) Nominal output Power on TX1 P_TX1 coefficient Temperature Nominal output Power on TX2 P_TX2 Temperature coefficient Output Power Dynamic Range on TX1 & TX2 with VB2n controlled Low Power level on TXn with VB2n<2.25V TX1 Power if VB21=3.3V & M1_v<0.2V/NC TX2 Power if VB22<2.25V & M2_v>3.15V Min 24 F_Tx/2 0.5 225 Typ Max Unit Conditions 24.5 GHz GHz 5.5 V 450 850 MHz/V 3 5 MHz/° C -15 -5 dBm -45 -30 dBm -40 -25 dBm 70 80 dBc 45 55 dBc - 90 1,5:1 - 80 2,5:1 8 dBc/Hz VB21, VB22>3.15V MHz 50 250 MHz/V 10.5 15.5 18.5 -2e-4 *T - 0.0219 9.5 15 19.5 -4e-4 *T - 0.0179 dBm 4.9


CHV2412-QDG CHV2421-QDG CHV3241-QDG


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)