CHX1162-QDG
20-40GHz Frequency Multiplier
GaAs Monolithic Microwave IC
Description
The CHX1162-QDG is a packaged monolithic time two multiplier which integrates input and output buffer. This circuit is a very versatile multiplier for telecommunication and specifically for E-band LO chain. Moreover it is proposed in standard surface mount package and integrates ESD protection. The overall power supply is of +5V/ 50mA. It is developed on a robust 0.15µm gate length pHEMT process, and will be available in a standard SMD package.
Main Features
■ Broadband performances: 17.5-21.5GHz ■ 8dBm Pout for +1dBm input power ■ DC bias: V+=5Volt, V- = -5V@Id=50mA ■ 24L-QFN4x4
Output power (dBm)
15 10 Pin= +1dBm
5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50
16
2F0 18
F0
20 Input Frequency (GHz)
22
24
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Fin Input frequency range
Fout Output frequency range
Pin Input power
Pout_H2 Output Power
Min Typ Max Unit
17.5
21.5 GHz
35 43 GHz
+1 dBm
8 dBm
Ref. : DSCHX1162-QDG2201 - 19 jul 12
1/10 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHX1162-QDG
20-40GHz Frequency Multiplier
Electrical Characteristics
Tamb.= +25°C, V+ = +5V
Symbol
Parameter
Min Typ Max Unit
Fin Input frequency range
17.5
21.5 GHz
Fout Output frequency range
35 43 GHz
Pin Input power Pout_H2 2nd harmonic output power
+1 dBm 8 dBm
Rej_H1 Fundamental rejection
40 dBc
RL _in Input return loss
-12 dB
RL_out Output return loss
-6 dB
V+ DC positive voltage
+5 V
V- DC negative voltage
-5 V
Id DC current
50 mA
These values are representative of onboard measurements as defined on the drawing in paragraph "Evaluation mother board".
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
V+ Positive bias voltage
5.5 V
V- Negative bias voltage
-6 V
Id DC current
80 mA
Pin Maximum input power
+6 dBm
Tj Junction temperature
175 °C
Ta Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Ref. : DSCHX1162-QDG2201 - 19 jul 12
2/10 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
20-40GHz Frequency Multiplier
CHX1162-QDG
Device thermal performances
All the figures given in this section are obtained assuming that the QFN device is cooled down only by conduction through the package thermal pad (no convection mode considered). The temperature is monitored at the package back-side interface (Tcase) as shown below. The system maximum temperature must be adjusted in order to guarantee that Tcase remains below than the maximum value specified in the next table. So, the system PCB must be designed to comply with this requirement.
DEVICE THERMAL SPECIFICATION : CHX1162-QDG
Recommended max. junction temperature (Tj max)
: 146 °C
Junction temperature absolute maximum rating
: 175 °C
Max. continuous dissipated power (Pdiss. Max.)
: 0.3 W
=> Pdiss. Max. derating above Tcase(1)= 85 °C :
4 mW/°C
Junction-Case thermal resistance (Rth J-C)(2)
: <242 °C/W
Minimum Tcase operating temperature(3)
: -40 °C
Maximum Tcase operating temperature(3)
: 85 °C
Minimum storage temperature
: -55 °C
Maximum storage temperature
: 150 °C
(1) Derating at junctio n temperature co nstant = Tj max. (2) Rth J-C is calculated fo r a wo rst case co nsidering the ho t t e s t junc t io n o f the M M IC and all the devices biased.
(3) Tcase=P ackage back side temperature measured under the die-attach-pad (see the drawing belo w).
0.3 Tcase
0.25
Pdiss. Max. @Tj