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CHX1162-QDG Dataheets PDF



Part Number CHX1162-QDG
Manufacturers United Monolithic Semiconductors
Logo United Monolithic Semiconductors
Description GaAs Monolithic Microwave IC
Datasheet CHX1162-QDG DatasheetCHX1162-QDG Datasheet (PDF)

CHX1162-QDG 20-40GHz Frequency Multiplier GaAs Monolithic Microwave IC Description The CHX1162-QDG is a packaged monolithic time two multiplier which integrates input and output buffer. This circuit is a very versatile multiplier for telecommunication and specifically for E-band LO chain. Moreover it is proposed in standard surface mount package and integrates ESD protection. The overall power supply is of +5V/ 50mA. It is developed on a robust 0.15µm gate length pHEMT process, and will be avai.

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CHX1162-QDG 20-40GHz Frequency Multiplier GaAs Monolithic Microwave IC Description The CHX1162-QDG is a packaged monolithic time two multiplier which integrates input and output buffer. This circuit is a very versatile multiplier for telecommunication and specifically for E-band LO chain. Moreover it is proposed in standard surface mount package and integrates ESD protection. The overall power supply is of +5V/ 50mA. It is developed on a robust 0.15µm gate length pHEMT process, and will be available in a standard SMD package. Main Features ■ Broadband performances: 17.5-21.5GHz ■ 8dBm Pout for +1dBm input power ■ DC bias: V+=5Volt, V- = -5V@Id=50mA ■ 24L-QFN4x4 Output power (dBm) 15 10 Pin= +1dBm 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 16 2F0 18 F0 20 Input Frequency (GHz) 22 24 Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Fin Input frequency range Fout Output frequency range Pin Input power Pout_H2 Output Power Min Typ Max Unit 17.5 21.5 GHz 35 43 GHz +1 dBm 8 dBm Ref. : DSCHX1162-QDG2201 - 19 jul 12 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHX1162-QDG 20-40GHz Frequency Multiplier Electrical Characteristics Tamb.= +25°C, V+ = +5V Symbol Parameter Min Typ Max Unit Fin Input frequency range 17.5 21.5 GHz Fout Output frequency range 35 43 GHz Pin Input power Pout_H2 2nd harmonic output power +1 dBm 8 dBm Rej_H1 Fundamental rejection 40 dBc RL _in Input return loss -12 dB RL_out Output return loss -6 dB V+ DC positive voltage +5 V V- DC negative voltage -5 V Id DC current 50 mA These values are representative of onboard measurements as defined on the drawing in paragraph "Evaluation mother board". Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit V+ Positive bias voltage 5.5 V V- Negative bias voltage -6 V Id DC current 80 mA Pin Maximum input power +6 dBm Tj Junction temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. Ref. : DSCHX1162-QDG2201 - 19 jul 12 2/10 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 20-40GHz Frequency Multiplier CHX1162-QDG Device thermal performances All the figures given in this section are obtained assuming that the QFN device is cooled down only by conduction through the package thermal pad (no convection mode considered). The temperature is monitored at the package back-side interface (Tcase) as shown below. The system maximum temperature must be adjusted in order to guarantee that Tcase remains below than the maximum value specified in the next table. So, the system PCB must be designed to comply with this requirement. DEVICE THERMAL SPECIFICATION : CHX1162-QDG Recommended max. junction temperature (Tj max) : 146 °C Junction temperature absolute maximum rating : 175 °C Max. continuous dissipated power (Pdiss. Max.) : 0.3 W => Pdiss. Max. derating above Tcase(1)= 85 °C : 4 mW/°C Junction-Case thermal resistance (Rth J-C)(2) : <242 °C/W Minimum Tcase operating temperature(3) : -40 °C Maximum Tcase operating temperature(3) : 85 °C Minimum storage temperature : -55 °C Maximum storage temperature : 150 °C (1) Derating at junctio n temperature co nstant = Tj max. (2) Rth J-C is calculated fo r a wo rst case co nsidering the ho t t e s t junc t io n o f the M M IC and all the devices biased. (3) Tcase=P ackage back side temperature measured under the die-attach-pad (see the drawing belo w). 0.3 Tcase 0.25 Pdiss. Max. @Tj


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