CHZ050A-SEA

CHZ050A-SEA 50W C Band HPA GaN HEMT on SiC Description The CHZ050A-SEA is an input and output internally-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in C-band. It is proposed in a low parasitic, low thermal resistance package, and doesn’t require any external matching circuitry. The CHZ050A-SEA is well suited for pulsed radar and satcom applications. It is developed on a 0.5µm gate length GaN HEMT process, and is available as a hermetic flange ceramic metal power package Main Features ■ Bandwidth : 5.2-5.8 GHz ■ Pulsed operating mode ■ High power: > 50W ■ High Efficiency: up to 45% ■ DC bias: VDS =50V @ ID_Q =400mA ■ MTTF > 106 hours @ Tj=200°C ■ 50 input and output matched ■ External input/output bias tees required ■ RoHS Flange Ceramic package VDS = 50V, ID_Q = 400mA Pulse mode (25µs-10%) Pin = 35dBm PAE Gain Pout Intrinsic performances of the packaged device Main Electrical Characteristics Tcase= +25°C, Pulsed mode, F = 5.2-5.8 GHz, VDS=50V, ID_Q=400mA Symbol Parameter Min Typ GSS Small Signal Gain 13 15 PSAT PAE Saturated Output Power Max Power Added Efficiency 50 60 40 45 GPAE_MAX Associated Gain at Max PAE 12 Max Unit dB W % dB Ref. : DSCHZ050A-SEA4176 - 25 jun 14 1/12 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (...