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CHUMB3PT

CHENMKO

Dual Digital Silicon Transistor

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere CHUMB3PT ...


CHENMKO

CHUMB3PT

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Description
CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere CHUMB3PT APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Both the CHDTA143T in one package. * Built in bias resistor(R1=4.7kΩ, Typ. ) SC-88/SOT-363 (1) 1.2~1.4 (6) 0.65 2.0~2.2 0.65 0.15~0.35 (3) (4) 1.15~1.35 CIRCUIT 6 R1 4 0.08~0.15 0.1 Min. 2.15~2.45 0.8~1.1 0~0.1 R1 13 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC60134). SYMBOL PARAMETER CONDITIONS VALUE VCBO Coll ector -Base voltage -50 VCEO Collector-Emitter voltage -50 VEBO Emitter-Base voltage -5 IC(Max.) PD Coll ector current Power dissipation Tamb ≤ 25 OC, Note 1 -100 150 TSTG Storage temperature −55 ∼ +150 TJ Junction temperature −55 ∼ +150 RθJ-S Thermal resistance , Note 1 junction - soldering point 140 Note 1. Transistor mounted on an FR4 printed-circuit board. SC-88/SOT-363 UNIT V V V mA mW OC OC OC/W 2004-03 RATING CHARACTERISTIC ( CHUMB3PT ) CHARA CTERISTICS Tamb = 25 °C unless otherwise speciÞed. SY MBOL PARAMETER CONDITIONS MIN. BVCBO BVCEO BVEBO VCE(sat) ICBO IEBO hFE R1 fT Collector-Base breakdown voltage IC= -50uA Collector-Emitter breakdown voltage IC= -1mA Emitter-Base b...




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