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PJC7403

Pan Jit International

20V P-Channel Enhancement Mode MOSFET

PPJC7403 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V Current -0.7A SOT-323 Features  RDS...


Pan Jit International

PJC7403

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PPJC7403 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V Current -0.7A SOT-323 Features  RDS(ON) , [email protected], [email protected]<325mΩ  RDS(ON) , [email protected], [email protected]<420mΩ  RDS(ON) , [email protected], [email protected]<600mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected 2KV HBM  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-323 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight : 0.0002 ounces, 0.005 grams  Marking : C03 Unit: inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 4) Power Dissipation Ta=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT -20 +8 -0.7 -2.8 350 2.8 -55~150 357 UNITS V V A A mW mW/ oC oC oC/W January 22,2015-REV.02 Page 1 PPJC7403 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Trans...




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