PPJC7403
20V P-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
-20 V Current
-0.7A
SOT-323
Features
RDS...
PPJC7403
20V P-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
-20 V Current
-0.7A
SOT-323
Features
RDS(ON) ,
[email protected],
[email protected]<325mΩ RDS(ON) ,
[email protected],
[email protected]<420mΩ RDS(ON) ,
[email protected],
[email protected]<600mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-323 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0002 ounces, 0.005 grams Marking : C03
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
PD
TJ,TSTG
RθJA
LIMIT -20 +8 -0.7 -2.8 350 2.8
-55~150
357
UNITS V V A A
mW mW/ oC
oC
oC/W
January 22,2015-REV.02
Page 1
PPJC7403
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Trans...