900V N-Channel MOSFET
PPJU2NA90 / PJP2NA90 / PJF2NA90 / PJD2NA90
900V N-Channel MOSFET
Voltage
900 V Current
2A
Features
RDS(ON), VGS@...
Description
PPJU2NA90 / PJP2NA90 / PJF2NA90 / PJD2NA90
900V N-Channel MOSFET
Voltage
900 V Current
2A
Features
RDS(ON), VGS@10V,ID@1A<6.4Ω High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
ITO-220AB-F
TO-220AB
Case : TO-251AB ,TO-220AB, ITO-220AB-F, TO-252 Package Terminals : Solderable per MIL-STD-750, Method 2026
TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
TO-220AB Approx. Weight : 0.0667 ounces, 1.89 grams
ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams
TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
SYMBOL TO-251AB TO-220AB ITO-220AB-F TO-252 UNITS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
TC=25oC Derate above 25oC
Operating Junction and
Storage Temperature Range
VDS VGS ID IDM EAS
PD
TJ,TSTG
50 0.4
900 +30
2 8 148 80 0.64
39 0.31
-55~150
V V A A mJ 50 W 0.4 W/ oC
oC
Typical Thermal resistance - Junction to Case - Junction to Ambient
RθJC RθJA
2.5 110
1.56 62.5
3.21 120
2.5 oC/W 110
Limited only By Maximum Junction Temperature
April 24,2015-REV.00
Page 1
PPJU2NA90 / PJP2NA90 / PJF2NA90 / PJD2NA90
Electrical
Characteristics
o
(TA...
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