PJP7NA80

PPJP7NA80 / PJF7NA80 800V N-Channel MOSFET Voltage 800 V Current 7A Features  RDS(ON), VGS@10V,ID@ 3.5A<1.55Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: TO-220AB, ITO-220AB-F Package  Terminals : Solderable per MIL-STD-750, Method 2026  TO-220AB Approx. Weight : 0.067 ounces, 1.89 grams  ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams ITO-220AB-F TO-220AB Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 1) Power Dissipation TC=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Case - Junction to Ambient VDS VGS ID IDM EAS PD TJ,TSTG RθJC RθJA  Limited only By Maximum Junction Temperature TO-220AB ITO-220AB-F 800 +30 154 1.23 7 28 534 50 0.4 -55~150 0.81 62.5 2.5 120 UNITS V V A A mJ W W/ oC oC oC/W March 10,2014-REV.00 Page 1 PPJP7NA80 / PJF7NA80 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITION Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage ...