DatasheetsPDF.com

PJU4NA90 Dataheets PDF



Part Number PJU4NA90
Manufacturers Pan Jit International
Logo Pan Jit International
Description 900V N-Channel MOSFET
Datasheet PJU4NA90 DatasheetPJU4NA90 Datasheet (PDF)

PPJU4NA90 / PJD4NA90 / PJP4NA90 / PJF4NA90 900V N-Channel MOSFET Voltage 900 V Current 4A Features  RDS(ON), VGS@10V,ID@2A<3.4Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data ITO-220AB-F TO-220AB TO-252AA TO-251AA  Case: TO-251AA,TO-252AA ,TO-220AB, ITO-220AB-F Package  Terminals : Soldera.

  PJU4NA90   PJU4NA90


Document
PPJU4NA90 / PJD4NA90 / PJP4NA90 / PJF4NA90 900V N-Channel MOSFET Voltage 900 V Current 4A Features  RDS(ON), VGS@10V,ID@2A<3.4Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data ITO-220AB-F TO-220AB TO-252AA TO-251AA  Case: TO-251AA,TO-252AA ,TO-220AB, ITO-220AB-F Package  Terminals : Solderable per MIL-STD-750, Method 2026  TO-251AA Approx. Weight : 0.0104 ounces, 0.297grams  TO-252AA Approx. Weight : 0.0104 ounces, 0.297grams  TO-220AB Approx. Weight : 0.065 ounces, 1.859 grams  ITO-220AB-F Approx. Weight : 0.068 ounces, 1.945 grams Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER SYMBOL TO-251AA Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 1) Power Dissipation TC=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Case - Junction to Ambient VDS VGS ID IDM EAS PD TJ,TSTG RθJC RθJA 90 0.72 1.39 110 TO-220AB ITO-220AB-F TO-252AA UNITS 900 +30 4 16 344 140 44 1.12 0.35 90 0.72 V V A A mJ W W/ oC -55~150 oC 0.89 2.84 1.39 oC/W 62.5 120 110  Limited only By Maximum Junction Temperature April 21,2015-REV.00 Page 1 PPJU4NA90 / PJD4NA90 / PJP4NA90 / PJF4NA90 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITION Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Diode Forward Voltage Dynamic (Note 4) BVDSS VGS(th) RDS(on) IDSS IGSS VSD VGS=0V,ID=250uA VDS=VGS,ID=250uA VGS=10V,ID=2A VDS=900V,VGS=0V VGS=+30V,VDS=0V IS=4A,VGS=0V Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS=720V, ID=4A, VGS=10V (Note 2,3) VDS=25V, VGS=0V, f=1.0MHZ Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode td(on) tr td(off) tf VDD=450V, ID=4A, RG=25Ω (Note 2,3) Maximum Continuous Drain-Source Diode Forward Current IS --- Maximum Pulsed Drain-Source Diode Forward Current ISM --- Reverse Recovery Time Reverse Recovery Charge trr VGS=0V, IS=4A Qrr dIF/ dt=100A/us (Note 2) NOTES : 1. L=30mH, IAS=4.7A, VDD=50V, RG=25ohm, Starting TJ=25oC 2. Pulse width<300us, Duty cycle<2% 3. Essentially independent of operating temperature typical characteristics. 4. Guaranteed by design, not subject to production testing MIN. TYP. MAX. UNITS 900 - - V 2 - 4V - 2.7 3.4 Ω - 0.03 1.0 uA - +10 +100 nA - - 1.4 V - 17 - 4.1 - 7.6 - 710 - 82 -5- 15 - 27 - 40 - 29 - nC pF ns - - 4A - - 16 A - 540 - 2.6 - ns uC April 21,2015-REV.00 Page 2 PPJU4NA90 / PJD4NA90 / PJP4NA90 / PJF4NA90 TYPICAL CHARACTERISTIC CURVES Fig.1 Output Characteristics Fig.2 Transfer Characteristics Fig.3 On-Resistance vs. Drain Current Fig.4 On-Resistance vs. Junction Temperature Fig.5 Capacitance vs. Drain-Source Voltage April 21,2015-REV.00 Fig.6 Source-Drain Diode Forward Voltage Page 3 PPJU4NA90 / PJD4NA90 / PJP4NA90 / PJF4NA90 TYPICAL CHARACTERISTIC CURVES Fig.7 Gate Charge Fig.8 BVDSS vs. Junction Temperature Fig.9 Threshold Voltage Variation with Temperature Fig.10 Maximum Safe Operating Area Fig.11 Maximum Safe Operating Area April 21,2015-REV.00 Fig.12 Maximum Safe Operating Area Page 4 PPJU4NA90 / PJD4NA90 / PJP4NA90 / PJF4NA90 TYPICAL CHARACTERISTIC CURVES Fig.13 PJU/PJD Normalized Transient Thermal Impedance vs. Pulse Width Fig.14 PJP4NA90 Normalized Transient Thermal Impedance vs. Pulse Width Fig.15 PJF4NA90 Normalized Transient Thermal Impedance vs. Pulse Width April 21,2015-REV.00 Page 5 PPJU4NA90 / PJD4NA90 / PJP4NA90 / PJF4NA90 Packaging Information . ITO-220AB-F Dimension Unit: mm TO-220AB Dimension Unit: mm TO-252AA Dimension Unit: mm TO-251AA Dimension Unit: mm April 21,2015-REV.00 Page 6 PPJU4NA90 / PJD4NA90 / PJP4NA90 / PJF4NA90 PART NO PACKING CODE VERSION Part No Packing Code PJU4NA90_T0_00001 PJD4NA90_L2_00001 PJP4NA90_T0_00001 PJF4NA90_T0_00001 Package Type TO-251AA TO-252AA TO-220AB ITO-220AB-F Packing type 80pcs / Tube 3,000pcs / 13” reel 50pcs / Tube 50pcs / Tube Marking U4NA90 D4NA90 P4NA90 F4NA90 Version Halogen free Halogen free Halogen free Halogen free April 21,2015-REV.00 Page 7 PPJU4NA90 / PJD4NA90 / PJP4NA90 / PJF4NA90 Disclaimer ● Reproducing and modifying information of the document is prohibited without permission from Panjit International Inc.. ● Panjit International Inc. reserves the rights to make changes of the content herein the document anytime without notification. Please refer to our website for the latest document. ● Panjit International Inc. disclaim.


PJF7NA80 PJU4NA90 PJD4NA90


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)