900V N-Channel MOSFET
PPJU4NA90 / PJD4NA90 / PJP4NA90 / PJF4NA90
900V N-Channel MOSFET
Voltage
900 V Current
4A
Features
RDS(ON), VGS@...
Description
PPJU4NA90 / PJD4NA90 / PJP4NA90 / PJF4NA90
900V N-Channel MOSFET
Voltage
900 V Current
4A
Features
RDS(ON), VGS@10V,ID@2A<3.4Ω High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
ITO-220AB-F
TO-220AB
TO-252AA
TO-251AA
Case: TO-251AA,TO-252AA ,TO-220AB, ITO-220AB-F Package
Terminals : Solderable per MIL-STD-750, Method 2026
TO-251AA Approx. Weight : 0.0104 ounces, 0.297grams
TO-252AA Approx. Weight : 0.0104 ounces, 0.297grams
TO-220AB Approx. Weight : 0.065 ounces, 1.859 grams
ITO-220AB-F Approx. Weight : 0.068 ounces, 1.945 grams
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
SYMBOL TO-251AA
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
TC=25oC Derate above 25oC
Operating Junction and
Storage Temperature Range
Typical Thermal resistance
- Junction to Case
- Junction to Ambient
VDS VGS ID IDM EAS PD
TJ,TSTG
RθJC RθJA
90 0.72
1.39 110
TO-220AB ITO-220AB-F TO-252AA UNITS
900 +30
4 16 344 140 44 1.12 0.35
90 0.72
V V A A mJ W W/ oC
-55~150
oC
0.89
2.84
1.39
oC/W
62.5 120 110
Limited only By Maximum Junction Temperature
April 21,2015-REV.00
Page 1
PPJU4NA90 / PJD4NA90 / PJP4NA90 / PJF4N...
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