PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80
800V N-Channel MOSFET
Voltage
800 V Current
1A
Features
RDS(ON), VGS@...
PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80
800V N-Channel MOSFET
Voltage
800 V Current
1A
Features
RDS(ON), VGS@10V,
[email protected]<16Ω High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std.
(Halogen Free)
TO-220AB
SOT-223
TO-252
TO-251AB
Mechanical Data
Case : TO-251AB ,TO-220AB, SOT-223, TO-252 Package Terminals : Solderable per MIL-STD-750, Method 2026 TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
TO-220AB Approx. Weight : 0.067 ounces, 1.89 grams SOT-223 Approx. Weight : 0.043 ounces, 0.123grams
TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
TC=25oC Derate above 25oC
VDS VGS ID IDM EAS
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Typical Thermal resistance - Junction to Case - Junction to Ambient
RθJC RθJA
TO-251AB
34 0.27
3.68 110
TO-220AB
TO-252
800
+30
1
4
23
45 34
0.36
0.27
-55~150
2.78
3.68
62.5
110
Limited only By Maximum Junction Temperature
SOT-223
0.3 1.2 3.3 0.026
UNITS
V V A A mJ W W/ oC
oC
37.9 (Note 4)
oC/W
March 10,2014-REV.00
Page 1
PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80
Electrical Ch...