PJD1NA80

PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80 800V N-Channel MOSFET Voltage 800 V Current 1A Features  RDS(ON), VGS@10V,[email protected]<16Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) TO-220AB SOT-223 TO-252 TO-251AB Mechanical Data  Case : TO-251AB ,TO-220AB, SOT-223, TO-252 Package  Terminals : Solderable per MIL-STD-750, Method 2026  TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams  TO-220AB Approx. Weight : 0.067 ounces, 1.89 grams  SOT-223 Approx. Weight : 0.043 ounces, 0.123grams  TO-252 Approx. Weight : 0.0104 ounces, 0.297grams Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 1) Power Dissipation TC=25oC Derate above 25oC VDS VGS ID IDM EAS PD Operating Junction and Storage Temperature Range TJ,TSTG Typical Thermal resistance - Junction to Case - Junction to Ambient RθJC RθJA TO-251AB 34 0.27 3.68 110 TO-220AB TO-252 800 +30 1 4 23 45 34 0.36 0.27 -55~150 2.78 3.68 62.5 110  Limited only By Maximum Junction Temperature SOT-223 0.3 1.2 3.3 0.026 UNITS V V A A mJ W W/ oC oC 37.9 (Note 4) oC/W March 10,2014-REV.00 Page 1 PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80 Electrical Ch...