PJW4N06A

PPJW4N06A 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 4.0 A SOT-223 Features  RDS(ON), VGS@10V,[email protected]<100mΩ  RDS(ON), [email protected],[email protected]<110mΩ  Advanced Trench Process Technology  High density cell design for ultra low on-resistance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) 1 Mechanical Data  Case : SOT-223 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight : 0.043 ounces, 0.123 grams  Marking: W4N06A Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Power Dissipation TA=25oC TA=70oC TA=25oC TA=70oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 5) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA  Limited only By Maximum Junction Temperature LIMIT 60 +20 4 3.2 8 3.1 2 -55~150 40.3 UNITS V V A A W oC oC/W July 7,2015-REV.00 Page 1 PPJW4N06A Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 6) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time T...