ULB122

UNISONIC TECHNOLOGIES CO., LTD ULB122 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR „ DESCRIPTION The UTC ULB122 is a medium power transistor designed for use in switching applications. „ FEATURES * High breakdown voltage * Low collector saturation voltage * Fast switching speed * Halogen Free „ ORDERING INFORMATION Ordering Number ULB122G-xx-TM3-T Package TO-251 Pin Assignment 123 BCE Packing Tube www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R213-014,C ULB122 NPN SILICON TRANSISTOR „ ABSOLUTE MAXIMUM RATING (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 6 V Collector Current DC Pulse IC 800 1600 mA mA Base Current DC Pulse IB 100 mA 200 mA Total Power Dissipation (TC=25°C) PD 20 W Junction Temperature TJ 150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO IC=100µA Collector-Emitter Breakdown Voltage BVCEO IC=10mA Emitter-Base Breakdown Voltage Collector Cutoff Current BVEBO IE=10µA ICBO VCB=600V Collector Cutoff Cur...