ULB124

UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications.  FEATURES * High Speed Switching * Low Saturation Voltage * High Reliability 1 1 TO-126 TO- 251 1 TO-220  ORDERING INFORMATION Ordering Number Lead Free Halogen Free ULB124L-xx-TA3-T ULB124G-xx-TA3-T ULB124L-xx-TM3-T ULB124G-xx-TM3-T ULB124L-xx-T60-K ULB124G-xx-T60-K Package TO-220 TO-251 TO-126 Pin Assignment 123 BCE BCE BCE Packing Tube Tube Bulk www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R213-013.G ULB124 NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 8 V Collector Current DC Pulse IC 2A 4A Base Current DC Pulse IB 1A 2A TO-220 35 Power Dissipation (TC=25°C) TO-251 PD 20 W TO-126 1.4 Junction Temperature TJ 150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Brea...